24.Future

24.Future - 1 High performance HEMT Why the funny gate? fT=...

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1 f T = 270 GHz, f max =490 GHz High performance HEMT High performance HEMT Why the funny gate?
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2 HJFET for high HJFET for high power output power output High power requires: high currents and high voltages. Obtaining high output voltage means avoiding avalanche breakdown. Some HJFETs are made from materials that can achieve this. They are not usually made from the same materials from which HEMTs are made.
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3 10.0 5.45 Diamond 2.0 3.39 GaN 3.5 3.26 SiC 0.4 1.43 GaAs 0.6 1.35 InP 0.3 1.1 Si E b (MV/cm) E g (eV) Material Gain KE from field Lose KE on collision with atom Bond broken by collision. EHP generated. More carriers gain KE from field etc. Avalanche breakdown Avalanche breakdown Rough relationship between E g and E br
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HJFET for High Power and High Frequency 90 20 10.0 2.7 1900 5.45 Diamond 17 1.5 2.0 2.5 1500 3.39 GaN 29 5.0 3.5 2.5 400 3.26 SiC 2 0.5 0.4 1 8500 1.43 GaAs 3 0.7 0.6 1.5 5000 1.35 InP 1 1.5 0.3 1 1350 1.1 Si JFOM (E b v sat )/Si κ (W/cm·K) E b (MV/cm) v sat (10 7
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24.Future - 1 High performance HEMT Why the funny gate? fT=...

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