Exam_final_05 - Department of Electrical and Computer Engineering UNIVERSITY OF BRITISH COLUMBIA EECE 480 MICROELECTRONIC DEVICES FINAL EXAM

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Unformatted text preview: Department of Electrical and Computer Engineering UNIVERSITY OF BRITISH COLUMBIA EECE 480 MICROELECTRONIC DEVICES FINAL EXAM, December, 2005 Time: 2.5 hours ANSWER ALL QUESTIONS. All questions carry equal weight. No notes, programmable calculators or books allowed. This exam consists of 2 pages. 1. (a) List the 3 main noise mechanisms that occur in transistors, and: (i) describe their physical origin; (ii) sketch the frequency dependence of their spectral noise-power density. (b) (i) Sketch the energy band diagram (conduction-band edge, Fermi level in the gate metal and in the semiconductor body) of a HEMT operating in the ON condition. (ii) Explain why the HEMT has a very low noise figure. 2. (a) Si MOSFETs dominate in digital, VLSI circuitry. State, and elaborate upon, the 3 main reasons why this is so. (b) There are indications that Si MOSFETs may be reaching their “limit” as regards the continued increase in their ON/OFF-current ratio via simply reducing the channel length L . Discuss why this is so.....
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This note was uploaded on 11/10/2010 for the course EECE 480 taught by Professor David during the Fall '09 term at The University of British Columbia.

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Exam_final_05 - Department of Electrical and Computer Engineering UNIVERSITY OF BRITISH COLUMBIA EECE 480 MICROELECTRONIC DEVICES FINAL EXAM

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