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exam_mterm_06

# exam_mterm_06 - Department of Electrical and Computer...

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Department of Electrical and Computer Engineering UNIVERSITY OF BRITISH COLUMBIA EECE 480 MICROELECTRONIC DEVICES MID-TERM EXAM, October 26, 2006 Time: 1.25 hours Full marks can be obtained by answering Questions 1, 2 and 3 correctly. No notes, programmable calculators or books allowed. This exam consists of 2 pages. Some equations are given on a separate page. Information: For Si: n i = 10 10 cm - 3 and E g = 1 . 12 eV. For this exam, take: kT/q = 25 mV and ln( X ) = 2 log 10 ( X ). 1. (a) [3 marks] In this question, it is permissible to assume that E F i for Si lies at an energy level that is midway between E C and E V . Explain, without doing a numerical evaluation, why this is an acceptable assumption. (b) [8 marks] Carefully construct an energy band diagram, in the x- direction (gate to body), of an N- MOSFET with a heavily doped p - type polySi gate, under equilibrium conditions. Show E 0 , E l , E C , E V , E F , and, in the body and the gate, E F i . (c) [3 marks] If the FET in Question 1(b) has an acceptor doping density in the body of 10 18 cm - 3 , how

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