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Unformatted text preview: Department of Electrical and Computer Engineering UNIVERSITY OF BRITISH COLUMBIA EECE 480 MICROELECTRONIC DEVICES MIDTERM EXAM, October 25, 2007 Time: 1.25 hours Full marks can be obtained by answering Questions 1, 2, 3, and 4 correctly. No notes, books, datastorage or telecommunicationdevices allowed. Simple calculators may be used. This exam consists of 2 pages. Some equations are given on a separate, doublesided sheet. Information: kT /q = 25 . 9 mV, = 8 . 85 × 10 12 F/m. For Si: n i = 10 10 cm 3 , E g = 1 . 12 eV, χ = 4 . 1 eV, r = 11 . 9, N C = 3 . 22 × 10 19 cm 3 , N V = 1 . 83 × 10 19 cm 3 . For CMOS90: V T = 0 . 26 V, t ox = 2 . 3 nm, ox = 3 . 9 , N A = 8 . 3 × 10 17 cm 3 , µ eff = 230 cm 2 (Vs) 1 , v sat = 7 × 10 6 cm/s. For SiO 2 : χ = 0 . 9 eV, E g = 8 eV. 1. [8 marks] Consider a CMOS90 NMOSFET with the usual heavily doped n type polySi gate ( E C E F = 0), and other parameters as listed above....
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This note was uploaded on 11/10/2010 for the course EECE 480 taught by Professor David during the Fall '09 term at The University of British Columbia.
 Fall '09
 David

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