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Unformatted text preview: Department of Electrical and Computer Engineering UNIVERSITY OF BRITISH COLUMBIA EECE 480 SEMICONDUCTOR DEVICES FINAL EXAM, December 12, 2001 Time: 2.5 hours Answer 4 (FOUR) questions. All questions carry equal weight. No notes, calculators or books allowed. This exam consists of 2 pages 1. BJT (a) Give precise definitions for f T and f max as they apply to bipolar transistors. (b) Identify the various device features that determine f T and f max , and comment on their relative impor- tance. (c) Discuss how vertical shrinking and lateral shrinking of a BJT affect f T and f max . 2. HBT Consider an n-p-n HBT which has emitter and collector regions made from material A and base region made from material B . Material A has an electron anity of 3 eV and a bandgap of 5 eV; the corresponding, respective quantities for material B are 4 eV and 2 eV. The emitter doping density is higher than that of the collector....
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This note was uploaded on 11/10/2010 for the course EECE 480 taught by Professor David during the Fall '09 term at The University of British Columbia.
- Fall '09