final_fall02

final_fall02 - Department of Electrical and Computer...

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Department of Electrical and Computer Engineering UNIVERSITY OF BRITISH COLUMBIA EECE 480 SEMICONDUCTOR DEVICES FINAL EXAM, December 12, 2002 Time: 2.5 hours Answer 4 (FOUR) questions. All questions carry equal weight. No notes, calculators or books allowed. This exam consists of 2 pages 1. BJT (a) Describe how high-value resistors can be obtained in a compact fashion in a traditional BJT process. (b) Why is “Electrostatic Discharge” an issue in bipolar circuits, and how can it be protected against in a technology such as GA911 ? (c) Describe the physical phenomena in a BJT that are represented by the SPICE parameters: VAF, ISE, NE, IKF. (d) What is storage capacitance in a BJT, and how is it represented in SPICE? 2. Scaling (a) Describe the e±ect that vertical scaling has had on the modeling of the collector current in bipolar transistors. (b) Describe the e±ect that vertical scaling, doping scaling, and voltage scaling has had on the sub-threshold current of MOSFETs. 3. Digital Logic
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final_fall02 - Department of Electrical and Computer...

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