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Unformatted text preview: Department of Electrical and Computer Engineering UNIVERSITY OF BRITISH COLUMBIA EECE 480 MICROELECTRONIC DEVICES FINAL EXAM, December 4, 2003 Time: 2.5 hours ANSWER ALL QUESTIONS. All questions carry equal weight. No notes, programmable calculators or books allowed. Some equations are given on the next page. This exam consists of 2 pages. 1. (a) Explain the phenomenon of deep depletion. (b) Sketch a cross-sectional view of a DRAM element. How and why does the drain differ from that of a regular MOSFET? (c) Explain the operations of writing and storing 1s and 0s, and of refreshing, in a DRAM. (d) Why is deep depletion not an issue in the switching of regular MOSFETs? 2. (a) What is the short-channel effect in MOSFETs? (b) Discuss the importance of the source/drain junction depth, and the source-drain voltage, in determining the extent of the short-channel effect. (c) How is the short-channel effect controlled (reduced) in ( i ) regular MOSFETs, and ( ii ) dual-gate MOS-...
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This note was uploaded on 11/10/2010 for the course EECE 480 taught by Professor David during the Fall '09 term at The University of British Columbia.
- Fall '09