final_spring01

final_spring01 - Department of Electrical and Computer...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: Department of Electrical and Computer Engineering UNIVERSITY OF BRITISH COLUMBIA EECE 480 SEMICONDUCTOR DEVICES FINAL EXAM, April 18, 2001 Time: 2.5 hours Answer 4 (FOUR) questions only. All questions carry equal weight. No notes, calculators or books allowed. This exam consists of 2 pages 1. BJT (a) Sketch the cross-sectional views of two BJTs: the first one is a GA911-style device; the second one is a higher performance transistor and employs trench isolation. (b) Discuss those features of the second transistor that are intended to make it a faster device than the first one. (c) GA911 is described as a 300 MHz process. What does this mean? How could this frequency metric be measured? 2. MORE BJT (a) Consider a 1-D representation of a n-p-n BJT, i.e. , E | B | C . Sketch profiles of the electron concentration, the hole concentration and the net doping density ( | N D- N A | ) for three different bias conditions in the active mode of operation, i.e. : (i) when emitter-base space-charge-region recombination contributes significantly to the base current;...
View Full Document

Page1 / 2

final_spring01 - Department of Electrical and Computer...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online