This preview has intentionally blurred sections. Sign up to view the full version.View Full Document
Unformatted text preview: Department of Electrical and Computer Engineering UNIVERSITY OF BRITISH COLUMBIA EECE 480 SEMICONDUCTOR DEVICES FINAL EXAM, April 18, 2001 Time: 2.5 hours Answer 4 (FOUR) questions only. All questions carry equal weight. No notes, calculators or books allowed. This exam consists of 2 pages 1. BJT (a) Sketch the cross-sectional views of two BJTs: the first one is a GA911-style device; the second one is a higher performance transistor and employs trench isolation. (b) Discuss those features of the second transistor that are intended to make it a faster device than the first one. (c) GA911 is described as a 300 MHz process. What does this mean? How could this frequency metric be measured? 2. MORE BJT (a) Consider a 1-D representation of a n-p-n BJT, i.e. , E | B | C . Sketch profiles of the electron concentration, the hole concentration and the net doping density ( | N D- N A | ) for three different bias conditions in the active mode of operation, i.e. : (i) when emitter-base space-charge-region recombination contributes significantly to the base current;...
View Full Document
- Fall '09
- Transistor, Bipolar junction transistor, Field-effect transistor, deep sub-micron FETs