121B_1_EE121B_Slide10 - MOS3

121B_1_EE121B_Slide10 - MOS3 - EE 121B Principles of...

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Slide 10-1 © 2006 Marko Sokolich All Rights Reserved EE 121B – Chi On Chui EE 121B Principles of Semiconductor Device Design Metal-Oxide-Semiconductor Transistors - I Professor Chi On Chui Electrical Engineering Department University of California, Los Angeles Email: [email protected] Slide 10-2 © 2006 Marko Sokolich All Rights Reserved EE 121B – Chi On Chui Outline MOS Field-Effect Transistor Introduction MOSFET Analysis Current-Voltage Characteristics Saturation and Pinch-off Transconductance Determination of Threshold Voltage from Measurement CMOS Inverter
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Slide 10-3 © 2006 Marko Sokolich All Rights Reserved EE 121B – Chi On Chui Classification of Transistors Field Effect Transistors – junction potential controls current flow by modulating depletion width Bipolar Junction Transistors – current flow controlled by minority carrier injection Transistors Field Effect Bipolar JFET MESFET MOSFET BJT HBT Common threads – 1. Current through two terminals controlled by a third terminal 2. Ability to change dc power into rf power…amplification of signals Slide 10-4 © 2006 Marko Sokolich All Rights Reserved EE 121B – Chi On Chui MOS Field Effect Transistor Cross-Section A MOS Field Effect Transistor (MOSFET) consists of a gate, a dielectric (oxide) a semiconductor with n + wells on either side and metal contacts for source and drain. Now there are 3 terminals and each can have a different voltage applied. The next part of our course deals with calculating the current in the device as a function of the voltages. n+ n+ p- S o u r c e D a i n Gate Oxide Silicon
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Slide 10-5 © 2006 Marko Sokolich All Rights Reserved EE 121B – Chi On Chui Biasing Scheme for MOSFET For measurements, one terminal of a MOS is grounded and the other two terminals are connected voltage sources. The heavily doped source and drain regions have large amounts of mobile charge…the channel between can either be depleted or in inversion… thus the gate controls the conduction between source and drain Slide 10-6 © 2006 Marko Sokolich All Rights Reserved EE 121B – Chi On Chui SUNY Buffalo Semiconductor Applets Online Main Menu - http://jas.eng.buffalo.edu/ MOSFET Operation – http://jas.eng.buffalo.edu/education/mos/mosfet/mos_2.html
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Slide 10-7 © 2006 Marko Sokolich All Rights Reserved EE 121B – Chi On Chui MOS Field Effect Transistor Cross-Section A MOS Field Effect Transistor (MOSFET) consists of a gate, a dielectric (oxide) a semiconductor with n+ wells on either side and metal contacts for source and drain. The device has a length, L , defined by the two n+ wells and a width, W , defined by the extent of the gate metal.
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This note was uploaded on 11/11/2010 for the course EE 121b taught by Professor Bjt-gamma during the Winter '08 term at UCLA.

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121B_1_EE121B_Slide10 - MOS3 - EE 121B Principles of...

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