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20081ee121B_1_EE121B_HW1_soln

# 20081ee121B_1_EE121B_HW1_soln - EE 121B Winter 2008 Prof...

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EE 121B / Winter 2008 / Prof. Chui Homework_Soln #01, p.1 EE 121B Principles of Semiconductor Device Design Winter 2008 Homework #01 (Solution) (Due Date: Jan 22 nd , 2008, 2pm) Physical constants: I. Electronic charge = 1.60 × 10 -19 C II. Vacuum Permittivity = 8.85 × 10 -14 F/cm III. Boltzmann constant = 8.62 × 10 -5 eV/K IV. Planck constant = 6.63 × 10 -34 J-s V. Electron mass in vacuum = 9.10 × 10 -31 kg General assumptions in all problems unless specifically stated otherwise: I. Temperature = 300 K II. Semiconductor = Silicon a. Intrinsic carrier concentration 1 × 10 10 cm -3 b. Permittivity = 11.8 1) For the PNP BJT shown in Fig. 1 with W b = 3 µ m that is maintained under equilibrium, a) Sketch as a function of position inside the BJT: i) The energy band diagram together with the Fermi level positions, ii) The electrostatic potential, setting V = 0 in the emitter region iii) The electric field, and iv) The charge density b) Calculate the potential difference between the collector and emitter

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20081ee121B_1_EE121B_HW1_soln - EE 121B Winter 2008 Prof...

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