20081ee121B_1_EE121B_HW2

20081ee121B_1_EE121B_HW2 - EE 121B / Winter 2008 / Prof....

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EE 121B / Winter 2008 / Prof. Chui Homework #02, p.1 EE 121B Principles of Semiconductor Device Design Winter 2008 Homework #2 (Due Date: Jan 29 th , 2008, 2pm) Physical constants: I. Electronic charge = 1.60 × 10 -19 C II. Vacuum Permittivity = 8.85 × 10 -14 F/cm III. Boltzmann constant = 8.62 × 10 -5 eV/K IV. Planck constant = 6.63 × 10 -34 J-s V. Electron mass in vacuum = 9.10 × 10 -31 kg General assumptions in all problems unless specifically stated otherwise: I. Temperature = 300 K II. Semiconductor = Silicon a. Intrinsic carrier concentration 1 × 10 10 cm -3 b. Permittivity = 11.8 1) For the PNP BJT shown in Fig. 1, with a 0.5 V forward bias applied across the emitter-base junction, a) With a 10.0V reverse bias applied across the collector-base junction, calculate: i) The leakage current density in the common base configuration with the emitter open, and ii) The leakage current density in the common emitter configuration with the base open b) Calculate: i) Base punchthrough voltage
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20081ee121B_1_EE121B_HW2 - EE 121B / Winter 2008 / Prof....

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