20081ee121B_1_EE121B_HW3

# 20081ee121B_1_EE121B_HW3 - EE 121B / Winter 2008 / Prof....

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EE 121B / Winter 2008 / Prof. Chui Homework #03, p.1 EE 121B Principles of Semiconductor Device Design Winter 2008 Homework #3 (Due Date: Feb 5 th , 2008, 2pm) Physical constants: I. Electronic charge = 1.60 × 10 -19 C II. Vacuum Permittivity = 8.85 × 10 -14 F/cm III. Boltzmann constant = 8.62 × 10 -5 eV/K IV. Planck constant = 6.63 × 10 -34 J-s V. Electron mass in vacuum = 9.10 × 10 -31 kg General assumptions in all problems unless specifically stated otherwise: I. Temperature = 300 K II. Semiconductor = Silicon a. Intrinsic carrier concentration 1 × 10 10 cm -3 b. Permittivity = 11.8 1) For the PNP BJT shown in Fig. 1, with a 0.5 V forward bias and 10.0V reverse bias respectively applied across the emitter-base and collector-base junction (assume I E = 1 mA), a) Calculate and suggest any assumption applied: i) Cutoff frequency in common base mode, ii) Cutoff frequency in common emitter mode, and iii) Unity gain cutoff frequency in common emitter mode b) Determine the equivalent circuit in common emitter mode by assuming the same emitter-

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## This note was uploaded on 11/11/2010 for the course EE 121b taught by Professor Bjt-gamma during the Winter '08 term at UCLA.

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20081ee121B_1_EE121B_HW3 - EE 121B / Winter 2008 / Prof....

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