InOxSide - InOxSide Edge isolation through back side...

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Unformatted text preview: InOxSide Edge isolation through back side emitter removal Edge Isolation Process Saw damage etching + texturing Diffusion n+ Si Si - Wafer AR-coating printing firing Edge isolation + Phosphor glass etching n+ Si Front Grid PSG p+ S i back << AR-coating Al InOxSide 15,01 15,00 156 and 125 mm square mc-Si cells, 14,81 14,70 14,80 Efficiency, % Experimental data 14,77 Plasma InSide 14,40 14,45 14,60 14,20 14,00 Alkaline 1 Alkaline 2 Textured Efficiency improvement on all materials 15,05 InOxSide Industrial process 156 mm square acidic textured mc-Si cells Plasma etching Jsc, Voc, Eta, Rs, Rsh, FF, % mA/ cm² mV % mOhm Ohm 76,1 33,05 605,4 15,2 3,8 31,3 76,8 32,91 605,6 15,3 3,5 57,7 0,7 -0,14 0,2 0,1 -0,3 26,4 100 cells InOxSide 100 cells Difference Better egde isolation performance InOxSide Industrial process 156mm square acidic textured mc-Si cells FF, % Jsc, mA/cm² Voc, mV Eta, % Plasma etching 77,3 32,5 605,0 15,2 77,4 32,9 606,0 15,4 0,1 0,3 1,0 0,2 4000 cells InOxSide 4000 cells Difference Increase in current InOxSide Industrial process 125mm semisquare acidic textured Cz-Si cells FF, % Jsc, mA/cm² Voc, mV Eta, % Plasma etching 74,6 34,84 611 15,91 74,9 35,19 614 16,20 0,3 0,35 3 0,29 16.000 cells InOxSide 2.400 cells Difference Better efficiency InOxSide Jsc, Voc, Eta, Rs, Rsh, mV % mOhm Ohm Lab scale 125 mm semisquare alkaline textured mc-Si cells FF, % mA/ cm² Plasma etching 73,6 34,82 613,0 15,7 7,9 29,7 74,8 34,57 611,3 15,8 7,7 110,2 1,1 -0,26 -1,7 0,1 -0,2 80,5 100 cells InOxSide 100 cells Difference Better egde isolation performance on Cz-Si ...
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This document was uploaded on 11/19/2010.

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