homework3 - on-resistance of 5 KOhms. The total source and...

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Computer-aided IC Design/VLSI I Spring 2010 (Prof. David Pan) Homework #3: Assigned Feb. 10, due Feb 17 1. Problem 4.3 from the Exercises for Chapter 4. 2. Problem 4.4 from the Exercises for Chapter 4. 3. Problem 4.10 from the Exercises for Chapter 4. 4. Problem 4.11 from the Exercises for Chapter 4. 5. Problem 4.13 from the Exercises for Chapter 4. (Hint: Try a design with 4 stages; 2-bit XNOR gates to check for bitwise equality, a 16-input AND function to check equality of the input words (using 4-input gates, for example), and an AND gate to choose between Y or 0). 6. Size the following gate so that it has the same drive strength as an inverter that has a pMOS transistor of width 3 and an nMOS transistor of width 2. 7. The n-channel transistors in the following portion of a CMOS circuit have an
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Unformatted text preview: on-resistance of 5 KOhms. The total source and drain (diffusion) capacitances of an n-channel transistor are 5 fF each. The parasitic (wiring, etc.) capacitances are shown lumped at the internal nodes. The output load capacitance shown (50 fF) includes the diffusion capacitance of the P-Network, wiring capacitances, and the driven gate capacitances. (a) Assume that all load and internal capacitances have been charged to V DD . Which input input vector will result in the longest t pdf ? Explain your answer. (b) Assuming all the capacitors are initially charged to V DD , use the Elmore delay approximation to find the value of t pdf for the input vector ABCDE = 10111....
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homework3 - on-resistance of 5 KOhms. The total source and...

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