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Q2 Solution EEE3396 F09

# Q2 Solution EEE3396 F09 - WW Quiz 2(10 points EEE 3396...

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Unformatted text preview: \ WW Quiz 2 (10 points) EEE 3396 Fa112009 Name............. ................. email“ ......................... PIN (any 4 digits) ........... Closed book, no notes. Show work for credit and box-in your answer. Note C: 3x108m/s, h=6.63x10‘34 J.s, m.,=9.11x10'31 kg, q=1.6x10'19 c, niSi(300K)=l.5x101°/Cm3, s.,=8.85x10'12 F/m or 8.85x10‘l4 F/cm, 8.51: 11.8, k=l.38x10'23J/K, 2,3102 =3.9, T=300K, EGSi=1.11eV, 1 eV=1.6x10'19 J, 1 Angstrom =10'10 m. A silicon sample is doped in such a way that By lies 0.30 eV below the conduction band at room temperature. The effective density of states electron mass is 1.1m0 and the effective density of states hole mass is 0.56 mg. 1a. Calculate the electron density no. lb. Calculate the hole density p0. Eva 0 Box) 6200 a] "‘ EC~€-F) 3 /— 7% h L09 Wgsz 62’ (AT VIC: hm“ Ct WlV‘S 3/2 x ,3. -23 “\$2 2W @‘68X165HBL 0Q We": (l& X (OM/Ow? _ 0.30/(M20517 3E5? ,9 W 26567 no: “C Q, fZﬁng/O Q . .- W ...
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