Quiz1_Solutions_F10 - Student l Germanium(Ge is a Group IV...

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Student #: l. Germanium (Ge) is a Group IV material and so has a valence of 4 like Silicon (Si), but it has a much higher intrinsic carrier density of ni: Z.4xl0l3 cm-3. a) Do you think the energy bandgap of Germanium is larger or smaller than that of Silicon? Explain your answer Sr,l^ cR- W, al,.fr' ,ts-D c.ynrU c,;*-"€-,^Lrr-&/*- "f- *e- is U"-- ...rur* yvt\6{-, ULr"P"cx.r-S tr-ex-:u &,v--o{^$lr- W4- to A# P*"- ry rt*.€*'*r*b**t $- fue;r$g*ntffi br*,]rf . J-L e.\r.. Jj*u-. €J wqot& b* s nqe* &**, b) What type (or Group) of material would you use for doping Germanium to be p-type? Explain your choice. s;.ou- Gu ir c*U"-v W wL\{*,'A,4,fu C', , ; 6, d"p,,*+ r,,-o-e,/s h rcc-a-pl- n-'vv- aLLl-,r^.-. (b Ao'i,, f {- ,^^-$-( I Vt*re- k-n&b*ae-- +3 &r L-u K Crrr-*vVTIi |,*-,^{{.-,# {-1 fu- b-,-e4, c) Since the intrinsic carrier concentration for Germanium is n;:2.4x1013 cD-3, what is the doping concentration required to obtain a minority carrier density of I cm-3 in this material? Briefly discuss the reiuonableness of the value you obtain. -fJ .^: a- uAL- f;t- ili4qEs "{ui,n: t'-...*'*$*- n -fuy';-3 ,L il,: No' t {,gx [*r u;t t* U* p ry (i fl,.,, rE y\sf 6 re^a^-Al* e*y:ry WL*t'-g; t r f t ,R if l*^,p#6$Lb{a I 'lx tDt: $* '{t Su #*"r&.# f ft t #&,;3
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  • Fall '10
  • mattdamomn
  • intrinsic carrier concentration, intrinsic carrier density, minority carrier density, one-dirnensional doping profile

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