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Unformatted text preview: January 27, 2010 ECE 4570 Assignment # 1 Spring 2010 Concepts: Conductivity in Semiconductors, Intrinsic and Extrinsic Carriers, Impurity Dop ing and Activation, Mobility and Carrier Scattering, Drift Current and Diffusion Current, Hall Effect Reading: Muller & Kamins, Device Electronics for Integrated Circuits : Chp.1, All Sec tions Homework Problems (Due Thursday , Feb. 11 in class) 1. Consider a piece of pure intrinsic silicon at room temperature (300 K). For this problem assume the following: E g = 1.1eV, m * n = 1.1 m , m * p = 0. 59 m , μ n = 1500 cm 2 /volt . sec, and μ p = 500 cm 2 /volt . sec a) Determine the effective density of states in the conduction band and the valence band at 300 K. b) Calculate the intrinsic electron and hole concentrations at 300 K. c) Neglecting the bandgap variation with temperature (i.e. assume the 300 K value), plot the intrinsic electron concentration on a log scale (use units of cm 3 ) verses temperature over a range from 300 to 1000 K. From this plot,) verses temperature over a range from 300 to 1000 K....
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This note was uploaded on 11/26/2010 for the course ECE 3060 at Cornell University (Engineering School).
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