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Unformatted text preview: February 11, 2010 ECE 4570 Assignment # 2 Spring 2010 Concepts: Silicon Processing - Impurity Diffusion, Ion Implantation, Impurity Profiles, Sheet Resistance, Integrated Resistors Reading Muller & Kamins, Device Electronics for Integrated Circuits : Chp.2, All Sec- tions Homework Problems (Due Thursday , February 25 in class) 1. Text Book Problem 2.13 (Use Figures 1.14 & 2.19 as needed) 2. Text Book Problem 2.14 3. Text Book Problems a) Problem 2.15 b) Problem 2.20a (use Table 1.1 as needed) 4. Text Book Problem 2.21 5. We have processed a silicon wafer. This process involves a phosphorous ion implant followed by a high temperature drive-in step into a p-type silicon substrate whose background impurity concentration is 2(10 14 ) cm- 3 . As implanted, the impurity distribution is Gaussian, and after the drive-in anneal the distribution is nearly Gaussian with increased penetration into the silicon from diffusion....
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This note was uploaded on 11/26/2010 for the course ECE 3060 at Cornell University (Engineering School).
- Integrated Circuit