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HW_2_2010 - ECE 4570 Assignment 2 Spring 2010 Concepts...

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February 11, 2010 ECE 4570 Assignment # 2 Spring 2010 Concepts: Silicon Processing - Impurity Diffusion, Ion Implantation, Impurity Profiles, Sheet Resistance, Integrated Resistors Reading Muller & Kamins, Device Electronics for Integrated Circuits : Chp.2, All Sec- tions Homework Problems (Due Thursday , February 25 in class) 1. Text Book Problem 2.13 (Use Figures 1.14 & 2.19 as needed) 2. Text Book Problem 2.14 3. Text Book Problems a) Problem 2.15 b) Problem 2.20a (use Table 1.1 as needed) 4. Text Book Problem 2.21 5. We have processed a silicon wafer. This process involves a phosphorous ion implant followed by a high temperature drive-in step into a p-type silicon substrate whose background impurity concentration is 2(10 14 ) cm - 3 . As implanted, the impurity distribution is Gaussian, and after the drive-in anneal the distribution is nearly Gaussian with increased penetration into the silicon from diffusion. Figure 1. Simulated phosphorous impurity profile (open circles) and Gaussian curve fit to the simulated data (line).
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