ECE453Fall2010Pract1Solution[1]

ECE453Fall2010Pract1Solution[1] - Fall 2010 Solution to...

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Fall 2010 Solution to Practice Exam I ECE 453 Exam I will be held Friday, Sept.24 in class, covering Notes 1-3, HW 1-3. CLOSED BOOK. This page will be provided. (Version Sept.22, slightly different from earlier versions) Non-MATLAB HW questions + Practice Exam I are a good guide to what you can expect on actual exam Constants Electronic charge , Planck's constant, , Boltzmann constant, k kT ~ 25 meV at T = 300K Free electron mass = 9.1e-31 Kg, Vacuum Permittivity = 8.85e-12 F/m Current (1a) Low bias (1b) , , and (2) , (3) N = dE D ( E U ) −∞ + f 1 ( E ) + f 2 ( E ) 2 (4) Conductance (5) d = {1, 2, 3} dimensions: , (6) , (7a) (7b) Quasi-Fermi levels (8a) Low bias (8b) (9) (10)
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ECE 453 Practice Exam I Nanoelectronics Copyright 2010 datta@purdue.edu All Rights Reserved 2 Problem 1: Electron in narrow-gap semiconductors are often written in the form where , are constants. Consider a large two-dimensional channel with dimensions L, W made of such a semiconductor. Find the density of states, D(E).
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This note was uploaded on 11/29/2010 for the course ECE 453 taught by Professor Supriyodatta during the Spring '10 term at Purdue University-West Lafayette.

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ECE453Fall2010Pract1Solution[1] - Fall 2010 Solution to...

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