HWSOL4

# HWSOL4 - valid V t definition should be physical as well as...

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ECE124A VLSI Principles Solutions to Homework #4 PROBLEM 1.

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(b) V TH is around -120 mV for I DS =1e-7 A/um. (c) Maximu gm occurs at Vgs<-0.4 V according to the Ids-Vgs curve. If we were to draw the Ids-Vgs data on a linear scale, the Ids values below 5e-5 A/um would be so small that we can treat those points as ~Ids=0 (on a linear scale). The max. gm method defines the Vth from the linear extrapolation of Ids-Vgs at peak transconductance to zero Ids. Because the max gm happens for Vgs<-0.4 V, it is reasonable to assume that the Vth defined by max gm method happens at Vgs < -120 mV. (d) The V t value of a MOSFET is dependent upon its definition, while the criteria for a

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Unformatted text preview: valid V t definition should be physical as well as easy to measure. A constant current method does not reflect any physical characteristics of the MOSFET, and therefore is not an effective way for definition of Vth, and comparison of different devices and technologies. PROBLEM 2. PROBLEM 3. The curve will look like this: Increasing the threshold voltage of a transistor makes it weaker compared to the other transistor. Therefore, the VTC curve will be shifted to left or right, because the weaker transistor turns on at a higher voltage. Solution to PROBLEM 4 will be posted later....
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## HWSOL4 - valid V t definition should be physical as well as...

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