F2010_ECE132_Quiz2_Wed

F2010_ECE132_Quiz2_Wed - ECE 132 Quiz 2 October 13, 2010...

Info iconThis preview shows page 1. Sign up to view the full content.

View Full Document Right Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: ECE 132 Quiz 2 October 13, 2010 Name __________________________ 1) Doping silicon (Si), a group IV element, with phosphorus (P), group V element, causes an extra energy level to become available in the band gap. For P in Si, calculate this new energy level’s distance away from the valence/conduction band. (Hint: There are two values that need to be changed from the Hydrogen energy levels) 2) What will this energy level be for phosphorus in germanium (Ge)? Additional Questions and constants/formulas on the back 3) Which combination (P in Si or P in Ge) would be best in terms of electrical performance and why? 4) Plot and label the new energy levels for both cases in the band diagrams below: Si Ec Ge Ec Ev Ev ; ; for Hydrogen ; ; For Germanium: For Silicon: ; ; ...
View Full Document

This note was uploaded on 12/06/2010 for the course ECE 132 taught by Professor Denbaars during the Fall '08 term at UCSB.

Ask a homework question - tutors are online