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Unformatted text preview: uncompensated n-type and p-type doped silicon with electron (and hole concentrations) is 10 17 cm-3 (i.e. donor, N D ,= acceptors, N A ,=10 17 ) . ( Use mobility values from your book, Fig 3.5 ) 6. By using the Figure 3.7, calculate the resistance of an intrinsic silicon bar with 100 2 cross sectional area and 1mm length at temperatures 200K, 250K, 300K. Assume n i =p i =10 10 cm-3 for all temperatures....
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This note was uploaded on 12/13/2010 for the course ELECTRICAL EECS 170A taught by Professor Ozdalboyraz during the Fall '10 term at UC Irvine.
- Fall '10