HOMEWORK_1 - uncompensated n-type and p-type doped silicon...

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EECS 170A, Fall 2010 Due Date: Friday October 8, 2010 HOMEWORK 1 1. Problem 1.3, Semiconductor Device Fundamentals, by R. Pierret, Page 20 2. Problem 1.4, Semiconductor Device Fundamentals, by R. Pierret, Page 20 3. Problem 1.5 (a-c), Semiconductor Device Fundamentals, by R. Pierret, Page 20 4. Problem 1.9, Semiconductor Device Fundamentals, by R. Pierret, Page 21 5. Compute the room temperature conductivity of intrinsic silicon and compare that with
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Unformatted text preview: uncompensated n-type and p-type doped silicon with electron (and hole concentrations) is 10 17 cm-3 (i.e. donor, N D ,= acceptors, N A ,=10 17 ) . ( Use mobility values from your book, Fig 3.5 ) 6. By using the Figure 3.7, calculate the resistance of an intrinsic silicon bar with 100 2 cross sectional area and 1mm length at temperatures 200K, 250K, 300K. Assume n i =p i =10 10 cm-3 for all temperatures....
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This note was uploaded on 12/13/2010 for the course ELECTRICAL EECS 170A taught by Professor Ozdalboyraz during the Fall '10 term at UC Irvine.

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