HOMEWORK_3 - 16 cm-3 Later on 10 17 cm-3 donors are added...

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EECS 170A, Fall 2010 Due Date: Friday October 22, 2010 HOMEWORK 3 1. Problem 2.20, Semiconductor Device Fundamentals, by R. Pierret, Page 74 2. Find the electron and hole concentrations in GaAs doped with N A =10 16 cm -3 . Find the position of the Fermi level with respect to the conduction band. (E g =1.43eV, n i =2.2x10 6 cm -3 ). 3. A sample silicon is has acceptor concentration of 4x10
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Unformatted text preview: 16 cm-3 . Later on 10 17 cm-3 donors are added. Find the room temperature concentrations of electrons and holes before and after donors were added. Plot band diagrams for both conditions indicating the location of Fermi energies. 4. Problem 3.12, Semiconductor Device Fundamentals, by R. Pierret, Page 143...
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This note was uploaded on 12/13/2010 for the course ELECTRICAL EECS 170A taught by Professor Ozdalboyraz during the Fall '10 term at UC Irvine.

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