EECS 170A, Fall 2010Due Date: Friday October 29, 2010 HOMEWORK 4 1.Energy band diagram of a 2μm long silicon sample is illustrated in the figure. a.Calculate the electric field along the sample b.Find the force on electrons in the sample. Which directions electrons and holes are drifted? 2.Consider a silicon material doped with 3x1016cm-3donor atoms. At t=0, a light source is turned on, producing uniform generation rate GL=2x1020cm-3/s. At t=10-7s, the light source is turned off. Determine the excess minority carrier concentration as a function of time (t) for 0≤t≤∞. Use τp=10-7s. 3.The electron concentration in silicon at T=300K is
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This note was uploaded on 12/13/2010 for the course ELECTRICAL EECS 170A taught by Professor Ozdalboyraz during the Fall '10 term at UC Irvine.