Unformatted text preview: 10 15 acceptor ions. The effective electron mobility in the channel when it is created is 820cm 2 /V-s. The oxide thickness is x =50nm with dielectric constant K O =3.9 . Also the channel length L=500nm and the depth of the device is, Z =5μm. a. Calculate the threshold voltage to create n-channel b. Calculate the output voltage, V D , for gate voltages V G = 0.5V &1V. Specify at which mode the MOSFET is working for these gate voltages c. At which mode the MOSFET will operate for gate voltage, V G = 5V. Develop a simple equation to solve the output voltage, V D , under this mode. Optional: Problem 17.4, P-Si n + n + GND GND V DD =5V R D V G V D...
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- Fall '10
- Semiconductor Device Fundamentals, R. Pierret