HOMEWORK_8 - EECS 170A Fall 2010 Due Date December 3 2010...

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EECS 170A, Fall 2010 Due Date: December 3, 2010 HOMEWORK 8 1. Problem 16.1, Semiconductor Device Fundamentals, by R. Pierret, Page 600 2. Problem 16.4(a-d), Semiconductor Device Fundamentals, by R. Pierret, Page 601 3. Problem 16.7, Semiconductor Device Fundamentals, by R. Pierret, Page 602 4. Problem 16.9(a-g), Semiconductor Device Fundamentals, by R. Pierret, Page 604 5. Problem 17.2(a-c), Semiconductor Device Fundamentals, by R. Pierret, Page 639 6. Problem 17.3, Semiconductor Device Fundamentals, by R. Pierret, Page 639. 7. An n-channel MOSFET circuit shown in the figure is fed by a gate voltage V G and V DD =5V. Drain resistance R D =2kΩ. The p -type substrate of the MOSFET is doped by
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Unformatted text preview: 10 15 acceptor ions. The effective electron mobility in the channel when it is created is 820cm 2 /V-s. The oxide thickness is x =50nm with dielectric constant K O =3.9 . Also the channel length L=500nm and the depth of the device is, Z =5μm. a. Calculate the threshold voltage to create n-channel b. Calculate the output voltage, V D , for gate voltages V G = 0.5V &1V. Specify at which mode the MOSFET is working for these gate voltages c. At which mode the MOSFET will operate for gate voltage, V G = 5V. Develop a simple equation to solve the output voltage, V D , under this mode. Optional: Problem 17.4, P-Si n + n + GND GND V DD =5V R D V G V D...
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  • Fall '10
  • OzdalBoyraz
  • Semiconductor Device Fundamentals, R. Pierret

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