PHYS 30502 - PHYS 3050 Lab Report V Introduction to...

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PHYS 3050 Lab Report V Introduction to Transistors Swapnil Agrawal 210049237 26th November 2009
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Swapnil Agrawal - 210049237 1 Table of Contents 1. INTRODCTION 2 1. Background 2 2. Aim 2 3. Apparatus 2 2. ANALYSIS, CALCULATIONS AND OBSERVATIONS 3 1. Testing Transistors 3 2. DC Transistor Characteristics 3 3. SOURCES OF ERROR 7 4. CONCLUSION 7 5. REFERENCES 7
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Swapnil Agrawal - 210049237 2 INTRODUCTION 1. Background The bipolar junction transistor (BJT), like the diode, utilizes the property of the PN junction in a semiconductor. Unlike the diode, the transistor is a three-port device (with the three ports referred to as the Base (B), Collector (C), and Emitter (E). The collector and the emitter regions are similarly doped (either p-type or n-type) while the base is oppositely doped. Hence there are two types of transistors - so called NPN and PNP transistors. 2. AIM The purpose of this experiment is for you to become familiar with the operating characteristics of the transistor. APPARATUS a) Agilent 33120A function/Arbitrary Waveform Generator b) Agilent 3630A Triple Output DC Power Supply c) Tektronix TDS200 Digital Storage Oscilloscope (DSO) d) Breadboard, Resistors and 2N3904 (NPN) 2N3906 (PNP) Transistor.
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Swapnil Agrawal - 210049237 3 ANALYSIS, CALCULATIONS AND OBSERVATIONS 4.1 Testing Transistors The 2N3904 NPN Transistor was selected. The DMM was put in diode measure mode and values were measured across the BE and CB junction. The following values were observed on measurement: 1. 2N3904 NPN Transistor: CB = 0.674 V BE = 0.7 V Negative on Base = Open
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This note was uploaded on 12/11/2010 for the course PHYSICS 3050 taught by Professor Menary during the Fall '10 term at York University.

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PHYS 30502 - PHYS 3050 Lab Report V Introduction to...

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