Electronics-I Lecture 36

Electronics-I Lecture 36 - Lecture 36 Electronics I i D –...

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Unformatted text preview: Lecture 36 Electronics I i D – V DS Characteristics • Three distinct regions Triode Saturation Cuttoff • Triode region V GS ≥V t (Induced channel) To keep v DS small V GD >V t (Continuous channel) V DS <V GS- V t N-Channel enhancement type MOSFET operates in triode region when V GS > V t and drain voltage is lower than gate voltage by at least V t Lecture 36 Electronics I i D – V DS Characteristics • In triode region = = - = 2245- 2245 -- =- OV n DS t GS OV t GS n DS v small D DS DS DS t GS n D DS DS t GS n D V L W k r-V V voltage V Overdrive V V L W k r i v r v V v L W k i v v V v L W k i DS ' 1 ' ' 2 ' / 1 ) ( ) ( 2 1 ) ( Approximation for small V DS V DS << 2V OV Lecture 36 Electronics I i D – V DS Characteristics • Saturation region V GS ≥V t (Induced channel) Increase v...
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Electronics-I Lecture 36 - Lecture 36 Electronics I i D –...

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