Electronics-I Lecture 40

Electronics-I Lecture 40 - BiasinginMOSAmplifier Circuits

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Lecture 40 Electronics I 1 Biasing in MOS Amplifier  Circuits Requires stable dc drain current I D Requires a dc Drain voltage to ensure  operation in saturation region for expected  input signal levels Methods studied for biasing BJT apply to  FET
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Lecture 40 Electronics I 2 Biasing of MOSFET Amplifiers Fix V GS Fixing v GS  is not a good  approach The parameters V t vary from one device to  the other V t μ n  also depend on  temperature V GS  becomes temperature  dependant  2 t GS ' n D ) V V ( L W k 2 1 i - =
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Lecture 40 Electronics I 3 Biasing of MOSFET Amplifiers with  R S V = V GS  + R I D    I = (V G – V GS  )/R S R S  is a feedback resistance providing negative  feedback 
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Lecture 40 Electronics I 4 Biasing of MOSFET Amplifiers with  R S Using Single Power Supply Since I G  = 0  R G1 G2  can be very large
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Electronics-I Lecture 40 - BiasinginMOSAmplifier Circuits

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