Chapter03-Part01-Diodes

Chapter03-Part01-Diodes - Department of Electrical and...

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Page 1 Department of Electrical and Computer Engineering ECSE- 330 Introduction to Electronics Diodes 3.1 J. Schwartz, 2007 Section 3 The p-n Junction and Diodes Sedra/Smith, Sections 3.1-3.7 Department of Electrical and Computer Engineering ECSE- 330 Introduction to Electronics Diodes 3.2 J. Schwartz, 2007 Outline of Section 3 - Diodes Other two terminal devices • Exponential model • Constant voltage drop model • Reverse breakdown • Applications • Small-signal model • PN junctions
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Page 2 Department of Electrical and Computer Engineering ECSE- 330 Introduction to Electronics Diodes 3.3 J. Schwartz, 2007 Resistors, Capacitors, Inductors Resistor: R V = IR Capacitor: C Inductor: I These devices have two terminals and do not have a required orientation. Also – all of these are LINEAR operations We will now look at our first non-linear & directional device dt dv c i = dt di l v = Department of Electrical and Computer Engineering ECSE- 330 Introduction to Electronics Diodes 3.4 J. Schwartz, 2007 Outline of Section 3 - Diodes • Other two terminal devices Exponential model • Constant voltage drop model • Reverse breakdown • Applications • Small-signal model • PN junctions
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Page 3 Department of Electrical and Computer Engineering ECSE- 330 Introduction to Electronics Diodes 3.5 J. Schwartz, 2007 Diode Symbol and Terminal Characteristics Exponential model: anode (p) cathode (n) v i = 1 T nV v S e I i Department of Electrical and Computer Engineering ECSE- 330 Introduction to Electronics Diodes 3.6 J. Schwartz, 2007 Diode Forward/Reverse Biasing 0 , 0 0 , 0 0 , 0 1 < < = = > > = i v for i v for i v for e I i T nV v S Volts (V) Current (I) Forward Bias: v > 0 Reverse Bias: v < 0 i +v -
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Page 4 Department of Electrical and Computer Engineering ECSE- 330 Introduction to Electronics Diodes 3.7 J. Schwartz, 2007 Exponential Model Definitions I S : reverse saturation current n: fitting parameter V T : Thermal Voltage k: Boltzmann constant (1.38x10 -23 J/K) T: Temperature (Kelvin) q: electron charge (1.6x10 -19 C) – proportional to cross-sectional area of current flow – discrete Si devices: I S ~ 10 -9 -10 -13 A – IC Si devices: I S 10 -15 A – normally between 1 and 2 for Si – discrete Si devices: n ~ 2 – IC Si devices: n ~ 1 q T k V T = – from device physics: – At room temperature, V T ~ 25 mV = 1 T nV v S e I i Department of Electrical and Computer Engineering ECSE- 330 Introduction to Electronics Diodes 3.8 J. Schwartz, 2007 Exponential Model – Forward Bias 1 exp >> T V n v As V increases , • The voltage at which the diode starts to conduct a noticeable current (mA) is called the cut-in voltage; ~ .5 V for silicon diodes When diode is fully conducting, V remains at roughly ~ 0.7 V for silicon diodes T nV v S e I i
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Page 5 Department of Electrical and Computer Engineering ECSE- 330 Introduction to Electronics Diodes 3.9 J. Schwartz, 2007 Forward Bias Analysis T nV v S e I i = = S T I i nV v ln
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This note was uploaded on 12/22/2010 for the course ECSE ecse 330 taught by Professor Rochette during the Winter '10 term at McGill.

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Chapter03-Part01-Diodes - Department of Electrical and...

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