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ECE495N-F08-HW_1

# ECE495N-F08-HW_1 - E CE 495N Fall08 M E118 MWF 1130A-1220P...

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9/3/08 ECE 495N, Fall’08 ME118, MWF 1130A-1220P Fundamentals of Nanoelectronics HW#2: Due Wednesday Sept.10 in class. Please turn in a copy of your MATLAB codes for Problems 1, 2. Consider the same problem as in HW 1, namely a channel with a density of states given by, D ( E ) = 0 ϑ ( ) , where represents the unit step function. The equilibrium electrochemical potential μ = 0.1 eV and k B T 1 = 2 = 0.025 eV . Assume the escape rates γ 1 and 2 to both be equal to 10 meV, and the density of states (for E>0) 0 to be 0.1 / eV. Problems 1 and 2 below require a computer evaluation of the current expression discussed in class: [ ] 12 ( ) () q I dED E U f E f E γγ +∞ −∞ = −− + (1) but Problem 2 also requires an additional self-consistent evaluation of U from the equations 11 2 2 fE N dED E U +∞ −∞ + = + (2) and 0 L eq U U UN N = +− (3) µ E D(E) 1 2 Source Channel Drain

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9/3/08 Problem 1: Calculate the current (I) versus drain voltage (
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ECE495N-F08-HW_1 - E CE 495N Fall08 M E118 MWF 1130A-1220P...

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