4b_Advanced_Aluminum_Metallization_complete

4b_Advanced_Aluminum_Metallization_complete - Planarization...

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Department of Metallurgical and Materials Engineering Planarization Techniques (contd.) ± We will demonstrate techniques for planarization using high temperature and high ion bombardment (bias) to increase surface mobility of the film. ± Advantages of this technique are: ² High rate ² Improved microstructure ² Reduced and uniform grain size ² Enhanced step coverage from resputtering. ± Planarization has been demonstrated on both stationary and scanning deposition tools.
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Department of Metallurgical and Materials Engineering Planarization on a Scanning System ± Experimental: ² MRC 643 scanning batch tool ² Pallet holding wafers can be biased during deposition ² Scanning pallet cannot be easily heated. ² Wafer scanning leads to a large temperature gradient across the wafer and pallet. ² Large temperature gradent across wafer is caused by thermal conduction from the leading edge to the trailing edge. ² Thermal model was set up to explain the wafer temperature distribution. ² Model was confirmed with in-situ measurements using a two-color pyrometer.
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Department of Metallurgical and Materials Engineering Thermal Model ± Wafer temperature profile as a function of time. ± Consider: 1. The flow of thermal energy between the wafer and external sources or sinks. 2.
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This note was uploaded on 12/30/2010 for the course MTE 550 taught by Professor S.gupta during the Spring '08 term at Alabama.

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4b_Advanced_Aluminum_Metallization_complete - Planarization...

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