midterm103_2010_solutions

midterm103_2010_solutions - of 10 17 cm-3 . (Electron...

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ECE 103 Midterm (Fall 2010) Assume silicon, room temperature, complete ionization. 1. (10 pts) A p-n junction with N a = 10 17 cm -3 and N d = 10 16 cm -3 is forward biased at 0.5 V. (a) What are the electron and hole concentrations at the edge of the depletion region on the n-type side? (b) What are the current component(s) at the same point as in (a)? Pick answer(s) from the list: (electron drift, electron diffusion, hole drift, hole diffusion). Solutions: (a) 16 10 = = d N n cm -3 12 / 2 10 4 . 5 × = = kT qV d i e N n p cm -3 (b) Electron drift and hole diffusion.
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2. (10 pts) Consider an n-type Schottky diode with metal work function of 4.7 eV and n-type doping
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Unformatted text preview: of 10 17 cm-3 . (Electron affinity in silicon is 4.0 eV.) (a) Draw the band diagram for a forward bias of 0.3 V. Label the Fermi levels. (b) Calculate the depletion layer width for the same bias as in (a). Solutions: (a) E f Bn m q = q -q = 0.7 eV E f 0.3 eV (b) 55 . ) 41 . 56 . ( 4 7 . 4 ln 2 =---= ---= i d g m bi n N q kT q E V V 057 . ) 3 . ( 2 =-= d bi si d qN V W m...
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midterm103_2010_solutions - of 10 17 cm-3 . (Electron...

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