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HW1102

# HW1102 - ECE102Fall2010 Homework#1...

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ECE102Fall 2010 Homework #1 Use the following device constants unless otherwise noted Cox=2E 8 F/cm 2 , n = 3500 cm 2 /V sec, V TN =0.5 V, p =1500 cm 2 /V sec, and V TP = 0.6 V 1. Use Matlab to graph the I D V DS curves for an NFET with W=10um and L=0.25um. Sweep V GS from 0 to 1.5V in 0.25V steps and V DS from 0 to 3V. 2. Use Matlab to plot I D as a function of V GS for the diode connected NFET shown where W=10um and L=0.25um. Sweep V GS from 0 to 1.5V. Increase the device width to 25um and repeat. 3. Find I D in the following circuits using Matlab. The bias voltages equal V G =1.2V and V DD =2.0V. The dimensions for the NFET are W=20um and L=0.5um, with =0.05V 1 . R S =1000 and R D =5000 . (a) (b) 4. Find expressions for the dc operating point (V B1 and V B2 ) of the following circuit with I B =250uA. PFET P 1 measures W=20um and L=0.25um while transistor P 2 measures W=25um and L=0.25um. Let V DD =2.5V and ignore .

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5. Determine the value of I OUT for the two current mirrors shown. NFET transistors N1 N2 are 60um wide while N3 N4 are 40um wide. All NFET devices have L=2um. Transistor P 1 measures W=80um and L=0.5um while device P 2 measures W=10um and L=1um. For the circuits,
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HW1102 - ECE102Fall2010 Homework#1...

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