EE5602_Assignment 2 - with the highest load resistance at...

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EE5602 Active RF and Microwave Techniques, Assignment 2. A transistor is biased with a collector emitter voltage of 3V and a collector current of 120mA. The s-parameters under this bias condition are given in table 1. Frequency s 11 s 12 s 21 s 22 2.0GHz 0.737 163 o 0.056 57 o 4.97 73 o 0.363 168 o 2.5GHz 0.745 158 o 0.068 53 o 4.55 60 o 0.372 161 o 3.0GHz 0.750 152 o 0.081 50 o 4.32 51 o 0.377 155 o Table 1, s-parameters from 2-3GHz You are required to design an amplifier using power gain greater than or equal to 16dB
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Unformatted text preview: with the highest load resistance at 2.5GHz. To help you in your design the relevant constant gain circles are given in table 2. g P C P R P 1.213 0.170 ∠ 89 o 0.792 1.528 0.231 ∠ 89 o 0.715 1.923 0.322 ∠ 89 o 0.584 2.421 0.472 ∠ 89 o 0.378 2.667 0.565 ∠ 89 o Table 2, constant gain circles at 2.5GHz. You are required to design an input and an output matching network using ell matching only....
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This note was uploaded on 01/11/2011 for the course EE 5602 taught by Professor Wingshingchan during the Spring '10 term at City University of Hong Kong.

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