2 Semiconductor - ~ 0.03eV ( at room temp kT ~ 0.025eV )...

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Hi – Fi amplifier circuit design analysis frequency response transistor pn - diode n / p – type semiconductor field-effect transistor npn / pnp transistor semiconductor pn – diode applications low / high frequency response
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Thermal energy break bonds electrons (-ve charge) & holes (+ve charge) free to move carriers (free carriers) resistance no. of electrons = no. of holes (Electrical Neutral) At room temperature ( ~ 25 0 C or ~ 300K ) :- Si Ge No. of Carriers ~ 10 10 cm -3 (holes) ~ 10 10 cm -3 (electrons) ~ 10 13 cm -3 (holes) ~ 10 13 cm -3 (electrons) ( * solid ~ 10 22 atoms per cm 3 ) ?? temp. -273 0 C (= 0K) ??
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Doped (Extrinsic) Semiconductors :- Group III atom (boron) Group V atom (arsenic) – acceptor atom – donor atom p - type n - type energy to free the electronics and holes
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Unformatted text preview: ~ 0.03eV ( at room temp kT ~ 0.025eV ) n-type with doping level ~ 10 16 cm-3 Temp (K) Carrier Concentration 300 600 Summary (Semiconductor) Semiconductor n-type Semiconductor p-type Semiconductor Holes Electrons You should able to – • Discuss the difference between conductors and semiconductors • Describe a conduction electron • Define hole • Explain how n-type ( p-type) semiconductors are formed • Describe a majority carrier and minority carrier • Explain the difference between electron current and hole current • Discuss temperature effects on n-type ( p-type) semiconductors • Discuss light effects on n-type ( p-type) semiconductors ?? Tutorial (Semiconductor) Chapter 1 problems - 7, 8, 9, 10, 11...
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This note was uploaded on 01/11/2011 for the course EE 2106 taught by Professor Ytchow during the Spring '07 term at City University of Hong Kong.

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2 Semiconductor - ~ 0.03eV ( at room temp kT ~ 0.025eV )...

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