4 pn Diode Principle - Part 2

4 pn Diode Principle - Part 2 - pn-Diode Principle Part 2...

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Unformatted text preview: pn-Diode Principle Part 2 Silicon Semiconductor Diode Characteristics(I-V Curve) :- -=1600,11expkDsDTVIIηIs- reverse saturation current (leakage current, dark current) η- material factor (with η= 1 for Ge and η= 2 for Si ) Tk- temperature in Kelvin (room temp ~25C ≅300K) (Tk= Tc+ 273, Tc- temp. in Celsius) VD+0.6V +0.65V -0.6V -20.0V ID~11mA ~29mA ~0.1μA (=IS) ~0.1μA (=IS) 8thEdition 9thEdition η⇔n TK⇔T k – is Boltzmann’s constant = 1.38 x 10-23J/K q – is the magnitude of electronic charge = 1.6 x 10-19C -=1600,11expkDSDTVIIη-=1expTnVVIIDSDqkTVT=+=pnnnPPnLDpLDqAIS---+++p-typen-typeE~--++p-typen-type-+Ebattery~ISminoritycarriersE~+++++++-------minoritycarriersIDVD (volt)VRIS (nA)- VDSilicon versus GermaniumVT- Threshold Voltage, minimum voltage ⇒before conduct (Si ∼0.7V, Ge ∼0.3V) Si (PIV, Current Rating, Temp range, Threshold Voltage VT) higher thanGe Is(Si ~ nA) much lower thanIs(Ge ~μA) ?? WHY ?Comparison of Germanium (Ge), Silicon (Si) and Gallium Arsenide (GaAs)GaAs IS ~ 1pA (pA = 10-12A) Vk (VTh) ~ 1.2V VZ(GaAs) >VZ(Si) >VZ(Ge) Temperature Effect...
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This note was uploaded on 01/11/2011 for the course EE 2106 taught by Professor Ytchow during the Spring '07 term at City University of Hong Kong.

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4 pn Diode Principle - Part 2 - pn-Diode Principle Part 2...

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