8 BJT Basic Principle - Hi Fi amplifier semiconductor pn...

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Hi – Fi amplifier circuit design analysis frequency response transistor pn - diode n / p – type semiconductor FET transistor npn / pnp ansistor semiconductor pn – diode applications low / high frequency response
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B ipolar J unction T ransistor - BJT npn / pnp transistor DC Biasing Circuits Basic Principle
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BJT - 3 terminals device Low Power Medium Power High Power Transistor Terminal Identification
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Reverse Bias :- ( Temp. , optical excitation E = h v , Injection carriers…. . ) I S I S mA !! I D 0 V D (volt) V R I S (nA) - V D - - + + p-type n-type - + minority carriers + + + + + + + - - - - - - - minority carriers I S (due to minority carriers) V R I S ( n A) V R I ( m A) I S (nA) I S
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Carriers Injection Transistor pnp or npn type n-type p-type - + V R n A n-type p-type - + V F m A V F I D (mA) 0 V R I S (nA)
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BJT Construction :- pnp transistor npn transistor E – Emitter , C – Collector , B – Base Middle layer lower doping level than the outer layers conductivity , resistance Why?? - because lower no. of carriers!! = 1 : 150 0.001 0.150 n p p E C B 0.001 in 0.150 in p n n E C B 0.001 in 0.150 in
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BJT 3 terminals device ??? Common-Base Configuration :- pnp transistor npn transistor Common-Emitter Configuration :- Common – Collector Configuration :- p n n E C B V CB I B I C I E V BE n p p E C B V BC V EB I C I E I B p n n V CE V BE C E B I C I B I E n p p V EC V EB C E B I C I B I E p n n V CE V BE E C B I E I B I C n p p V EC V CB E C B I E I B I C
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Common-Base Configuration :- pnp transistor npn
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8 BJT Basic Principle - Hi Fi amplifier semiconductor pn...

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