lecture2 - ECE520 VLSI Design Lecture 2 Basic MOS Physics...

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1 ECE520 - Lecture 2 Slide: 1 University of New Mexico Office: ECE Bldg. 230B Office hours: Tuesday 2:00-3:00PM or by appointment E-mail: [email protected] Payman Zarkesh-Ha ECE520 – VLSI Design Lecture 2: Basic MOS Physics ECE520 - Lecture 2 Slide: 2 University of New Mexico Review of Last Lecture Semiconductor technology trend and Moor’s law Benefits of transistor scaling: More functionality in the same foot print Faster device Devices with less switching energy Less cost/function Challenges of transistor scaling: Device size reaching quantum level Power dissipation and heat removal concerns Interconnect worsen by scaling Manufacturing yield issues
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2 ECE520 - Lecture 2 Slide: 3 University of New Mexico Today’s Lecture Overview of Diode Physics BASIC MOS Physics: Understanding of device operation Basic device equations for long channel MOSFET Long channel MOS models for manual analysis ECE520 - Lecture 2 Slide: 4 University of New Mexico Reading Assignment Today we will review Chapter 3 (MOS Physics) Skim through Diodes but focus on Section 3.2.3 (diode transient behavior) Study Section 3.3 (MOS transistor) thoroughly
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3 ECE520 - Lecture 2 Slide: 5 University of New Mexico The Diode n p p n BA SiO 2 Al A B Al A B Cross-section of pn -junction in an IC process One-dimensional representation diode symbol ECE520 - Lecture 2 Slide: 6 University of New Mexico Depletion Region hole diffusion electron diffusion pn hole drift electron drift Charge Density Distance x + - Electrical x Field x Potential V W 2 -W 1 (a) Current flow. (b) Charge density. (c) Electric field. (d) Electrostatic potential. Built-in potential
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4 ECE520 - Lecture 2 Slide: 7 University of New Mexico Forward Bias Diode x p n0 n p0 -W 1 W 2 0 p n (W 2 ) n-region p-region L p diffusion Typically avoided in Digital ICs ECE520 - Lecture 2 Slide: 8 University of New Mexico Reverse Bias Diode x p n0 n p0 -W 1 W 2 0 n-region p-region diffusion The Dominant Operation Mode
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5 ECE520 - Lecture 2 Slide: 9 University of New Mexico Diode IV Curve ECE520 - Lecture 2 Slide: 10
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lecture2 - ECE520 VLSI Design Lecture 2 Basic MOS Physics...

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