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lecture23 - ECE520 VLSI Design Lecture 23 SRAM DRAM...

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1 ECE520 – Lecture 23 Slide: 1 University of New Mexico Office: ECE Bldg. 230B Office hours: Tuesday 2:00-3:00PM or by appointment E-mail: [email protected] Payman Zarkesh-Ha ECE520 – VLSI Design Lecture 23: SRAM & DRAM Memories ECE520 – Lecture 23 Slide: 2 University of New Mexico Review of Last Lecture Nonvolatile Memories EPROM EEPROM Flash
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2 ECE520 – Lecture 23 Slide: 3 University of New Mexico Today’s Lecture Static Random-Access Memory (SRAM) SRAM cell SRAM architecture Sense amplifier Dynamic Random-Access Memory (DRAM) DRAM cells DRAM Capacitor implementation DRAM Sense amplifier ECE 638 (Fall ‘10) – ST: VLSI Design & Testing ECE520 – Lecture 23 Slide: 4 University of New Mexico SRAM Cell SRAM cell is quite similar to flip-flop without any protective circuitry Therefore, reliable operation imposes transistor sizing constraints. Cell is selected by word line (WL=1) and read and write are often differential BL
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