Lect2_RF CMOS Model

Lect2_RF CMOS Model - ECE 894 RF and mmWave Front-end...

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ECE 894 RF and mmWave Front-end Circuit Design Prof. Waleed Khalil Lecture RF CMOS Model 2 1
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CMOS Model for High Frequency (HF) Operation Include bias dependence of small-signal parameters Accurately predict HF noise Include CMOS NQS effect in order to accurately describe the device behavior at very HF (i.e. near device’s f T ) Capture the device’s nonlinear (large signal) behavior in order to accurately simulate parameters such as IP3, IP2, etc… Include physics-based and scalable components to enable statistical device modeling 2 “Device Modeling for Analog and RF CMOS Circuit Design,” T. Ytterdal, Y. Cheng and T. Fjeldly John Wiley & Sons , 2003
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RF CMOS MODEL RF power loss and noise impact due to: Effective gate resistance , R g Substrate resistive network Extrinsic source/drain resistance Bias-dependent capacitance model 3 “MOS transistor modeling for RF IC design,” Trans. Solid State Circuits, Feb 2000 “An MOS transistor model for RF IC Design valid in all regions of operation,” Trans. MTT, Jan 2002 “CMOS RF modeling for GHz communication IC’s,” Symp. on VLSl Tech., 1999 “Impact of distributed gate resistance on the performance of MOS devices,” TCAS I, Nov 1994
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Lect2_RF CMOS Model - ECE 894 RF and mmWave Front-end...

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