Lect6_Noise Model II

Lect6_Noise Model II - ECE 894 RF and mmWave Front-end...

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ECE 894 RF and mmWave Front-end Circuit Design Prof. Waleed Khalil Lecture Noise Model II 6 1
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Modeling Gate-Induced Thermal Noise 2 2 2 1 4 , 5 1 :4 4 55 ng g g do ng do m v kT r r g v kT kT gg δ α δδ = = = = C gs g m v gs C gd v gs + - r g v ng 2 C gs g m v gs i ng 2 C gd v gs + - g g 2 2 2 22 2 2 1 : 4 5 4 5 ng ng gs m ng ng gs T m ng g g T vi jC g f i v C kT f g f i kT g g f ω ωδ =  = ⋅=   = ⇒= δ ≈ 2 γ
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Gate-Induced Noise: Input Equivalent Circuit (1/2) 3 Noisy Ckt. Equiv. Input-Referred Noise Ckt. 0= 0 mn n gv v ⇒= I) Input short circuit, measure output current i n 2 v n 2 Noiseless Network i o C GS v gs + - g m v gs 0 o i = o i gv = C GS g m v gs v gs + - i ng 2 i o Channel-induced gate noise does not contribute to voltage noise
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Gate-Induced Noise: Input Equivalent Circuit (2/2) 4 Noisy Ckt. Equiv. Input-Referred Noise Ckt. 2 22 = 4 5 n ng m n ng T ii g f i i kT f α δ  ⇒= =   II) Input open circuit, measure output current i n 2 v n 2 Noiseless Network i o C GS v gs + - g m v gs m o ng gs g
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Lect6_Noise Model II - ECE 894 RF and mmWave Front-end...

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