Lecture 2 - EEE 5320 Bipolar Analog IC Design Intrinsic...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
EEE 5320 Bipolar Analog IC Design Lecture 2 Intrinsic Silicon Si: Group 4 of the periodic table ~10 23 atoms/cm 3 Tedrahedral crystal structure like diamond All 4 valence electrons form stable covalent bonds Only a tiny fraction of electrons are available to conduct current at room temperature Intrinsic concentration n i at 300 K ! 10 11 /cm 3 Doped (Extrinsic) Silicon Small concentrations of impurities have big effects on the electrical properties N-Type Add Group 5 impurities, usually phosphorus or arsenic as donors of electrons Donor atom easily gives up its 5 th valence electron Donor atom, fixed in place in the crystal, becomes ionized (one positive charge) Electron is free to move around Concentration n of free electrons ! donor concentration N D P-Type Add Group 3 impurities, usually boron, as acceptors of electrons Acceptor atom easily takes on an electron from somewhere The acceptor atom, fixed in place in the crystal, becomes ionized (one negative charge)
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 01/17/2011 for the course EEE 5320 taught by Professor Dr.robertfox during the Fall '10 term at University of Florida.

Page1 / 10

Lecture 2 - EEE 5320 Bipolar Analog IC Design Intrinsic...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online