{[ promptMessage ]}

Bookmark it

{[ promptMessage ]}

Lecture 4B - l $55 5‘ 320 ‘ 14.21144#5533 7(VJ PA{a...

Info iconThis preview shows pages 1–9. Sign up to view the full content.

View Full Document Right Arrow Icon
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Background image of page 2
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Background image of page 4
Background image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Background image of page 6
Background image of page 7

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Background image of page 8
Background image of page 9
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: __ '_ l $55 5‘ 320 ‘ 14.21144»; #5533 7' (VJ PA {a // ‘ fa Olfikrlon C (/e 1) Goal 5’07. [yer 4) Coat (of {A 2401‘- hens-f. $51905: Hn‘st {‘Aroujlx ‘mrefu/{y 4/1744 ?/ M4rk 69 Petite/7 (hymn «map-val Ma's?) (“"0" s: “'- é) Pr: Def 0571‘- av 20M. 4‘mf/M‘ far/wt) fie; 7) DrNe iu. (/ijm 4/21 Ayé fave/a 750:) fi 43* C4". 1! fat-11,51 éz; iuo/ m/fM/raua “64a év 44/14 I) “:7 2) (DZ/owns”- —~ Po/yn/nm , 346/, «My, name/.63 Md 3) i/I'l‘l-«h/ freez’i (don/3444’: 0/5MWJ g‘OQ’ ( 4/ Mi%&m‘/.rf (”at/5- 17a .. 1;; (Ava 447M a/‘JHII D°£";£ (1mg: {70! Jam/2% ‘2 ¢ 4) Inc}. $4.12 [ac/14%. (M,1¢Mwe//~ 204.6" (((aZ) a.) Diffm JLNlK: 1001 ' b 1:?«14/ 1) new /7 144% (75/ SWMJ Aurigé tog/45294: ” my 5 c. I) P-é7pe Lode? “Vowm‘f’ Boron 2) H" burl-e]; Ila/W > 3) €93 3””‘0‘ 55" “(lec‘f‘cr ”Ion—cud EFLIWZI 4/) Ballot": (Sun-Dumb u with P) 5? bar. céfiiurlm.’ ~3flu/ ZpoA/fltp_é7fl 6)deiW, nip“, 5k/g (also CoI/«f‘w- akin/T) 7 Mad Mics (by w a’whcowfl ‘ - 14401024th 33']— Prat“; D P Substmvfg z) W loaned Myer 3) W (1AM) I’ve-pi [447“- | _% n'-type epitaxial layer ‘1) 5612561142 Si eff/ts MoL i l 2‘2‘.‘ l5)(ouec‘éar peat—1*“ 6{""""j(" ‘ 2‘4“)“th (“Q Q) SDHOLJ P ‘ bum tMP IM p‘baseiaver h” Poly-Si (yr—av em ' g) F+ mph/9:6 for “extrinsic.“ bue (/ooo-LeSPSfauu [aferL COWcht), Selg’dl «.(TAQJ\ Q Wl‘fiér 1 l p’imnlant l x” 11" polysifioon emitter base layer q) Brze‘S- khk-éehfwméue (hum-LA 2’; JMqu. «seam my. M42244 JLN‘K H*fo|¢1-Si 1-41?) Jt‘hjle‘cvapfd fi, narrouqiwj Hu. Jamal 2% ~ 0"/*-"‘~« (0) (”+31ch M I95 metal emitter metal 0 l ‘ z z; n V | Me {‘1 l‘ 7' Base contact Polyisilicon Collemor coma“ --—E-- 23> Buriedlaver :> Thick oxide edge :> n’ Collector 3 p4L Base \\\‘ 3 Polysilicon E 3 Contactregions ——— -_‘> Metal #46 3/? Distance. ,1 [ll H l .\\\\\‘ ‘_ ..‘. __. § “\ e \ Collector Figure 2.31 Plan View and cross section of a typical advanced—technology bipolar transrstor. Note the much smaller dimensions compared with the high-voltage device. “M Vertical npn Lateral pnp Transistor with 2112 Transistor with 2 #2 Parameter Emitter Area Emitter area - W :npurity concentration. cm'3 3; 120 50 ‘°'°‘“°°"°"A'.‘" fix 2 3 VA 35 V 30 V 101° IS 6x10‘"’A 6x 10‘13A WWW) [co 1 pA l pA ' B ch 8 V 4 14 V I ‘°" B Vcao 18 V 18 V B V530 6 V 18 V 1:,- 10 ps 650 ps ‘°‘a tn 5 ns 5 ns *5 400 Q 200 Q Buried lave! (Sb) rc 100 Q 20 f2 10” r“ ' 409 10 Q C #0 5 f F 14 i F 0110, 0.8 V 0.7 V 19“ Depth. n¢ 0.4 0.5 CuO 5 {F 15 {F Epi law W) 1/1.,c 0.6 V 0.6 V 10‘5 n‘ 033 I 033 ’ t Substrate (B) Ca0(Cb,o) 20 f F 40 f F 5m" Mm 30‘ 333V 3': V Figure 2.24 Typical impurity profile in a shallow oxide-isolated bipolar transistor. , . . W e 2.32 Typical-device parameters for bipolar transistors in a low-voltage oxide- :d ion implanted process. \ 'l firth to pub/e: Ml WWW gr— _. P“ a.“ lmk Karo“, .te/f*a/Zra¢4( Z; poly—5'2 what I " reduce: ma. (Ck) .sLau-fcas bashdurm/f'faa‘Q [6(4ij (mm) a . .45 —- inn-,fmla‘aw‘éeak 3n {Hun bu‘e.a.llaw5 514.4110“) but: ward. 300x ‘- (0159(- ‘ua'wr-w' W5 lower: ’C’F (“43995 J13 - maéécr awf-Jiffilred 51-4». poly—S: can {act 4— 4.110405 Miami died ((0495 (J2) ‘." ”470qu 545!- Mia}!!! (fight/r .IIVAB , Luff; (5 M Cje,‘ 642‘... 'f Poly” 1‘; stfi/e-cryju Me’f-éer tack/35m ?rofer.£i‘e.{ .' lowér :hék. back’iujeéfiot; ' I. "‘1 Exforks Jeeadf ,8 j ' 2nd Powsuucou ‘ ' LEVEL (em-rem m POLYSIUCON °’“°E “a? LEVEL (BASE) ' I fl, "WW '\\\ AW 7% flan—am —_ - . ' P SUBSTRATE ‘ Figure 3.24 Cmss-seetion of a bipolar Innsistor utilizing two levels of polysilicon. P4» poiysilioon is used to contact the base: region and N+ polysilicon serves IS the source (at the ', “.3458!in polysilioon emitter. "t #:1444W150w (m: Es‘ee» was . ;. 4/7 50 SHEETS - 22-142 100 SHEETS 22-144 200‘ SHEETS 22-141 ’0) _ AMPAD 13.25% Mafia: ‘9 i. D . -- _ a 5 ~ V» a” ‘ 22221 T . 22ng f -' AB , Mum; ‘ - " S 1550.” t W Tie p to Mt Mira—w (w; “#5) vo/fl‘y, I {7150 mostP Pas 7'67V_£. (Vac ow Veg) filo/{49¢ i». H; S/SM, 1‘5- 4Voica Mum/r04 5;“de 4197' 5/0 TB ba/IC'. [email protected]/* Oat ‘ (Al/n45) “AK/Tide!" . @5953: Na Wren/f" cfiv M7 VDS Vas~ VT >VDSZO,‘~ M3 1- Java Vol'éag’qa “flaw/1‘s 64:19“: 1‘3: surpaflém CAM-Mlmneyfly” s is 3 TD : K1122. (VA-3‘ VT “ v%f-)VD£" ”LEV“ V)\/3>5'~ VD: ] Not V95 W aég/fl (4941/66.! 041an W m 4/6 IDS . For/c.6014 mews Maw, Mafia?! M when .Vns —Vps.+r= V45~V~ V, - .LI) ”(W'a‘jf- <Vas- VQL 'Vps > V‘s‘VT ?° : Ac. fivg: @Muf‘ mrmu‘Mfisf-‘j MMW‘j’ V9.1“. 1‘0: ELKI%(VA.> V?)1 ‘51- Vatx‘ V1— 5O SHEETS 22.142 100 SHEETS 22444 200 SHEETS I 22-‘141 fly qu‘vrmmcc 8) (a M¢4$¢=§ 4.5/4 - ALE-ElagLfimm‘lB » c/z i . COM-L Veda/C {14’0ch 457(‘(Mb4‘y Alf/VS cam” Ae «240% 7‘2: CMOJ chsjes (J‘W AJlL—WJW ”w! MoJ“/‘{7 ~ (37M “W“W’) °" (“405 Wu. 4% {a AIM/Mafia, (Jeri A774¢5+‘P¢4f0V‘W about]? ad (#0ng 3 l l l I I i 5 ! Mwu‘fia Wf/fisms) , I 3’: 42 Her; ' ‘ ; Germrm Cw Av. (xv/MM m2; 1%; (out, QMQL eW # fléw‘f‘f V’ “7/" “4 4w? Warp/W 'muws—o— I we names“ W'ém-fVem/éf. 7%.; m K ‘ éuu gar? 74‘ be MMW/ may hm Wm (h) ml imp/Long VA. I 7%4 W7 WM WW £01!”ch 4% firm, uifié 39’: 5:6de 1!.ng 4,71% 2%“ smilw-sy-aed Amadwmm' dex. SOSHEETS 22442 1OOSHEETS 22-144 200 SHEETS 22-141 $3; . AMDAD ‘ky‘ "- 41”:ng 459 93,4 of tart-“76" 3“:ij .. .______L___5:3._;o_ ,. _.___________L_--._ _ _.~_415_,__.7/2_ Pit/403M w IVPIV fracas; &Cd/ _- :- 3-14 D L H.51- ' . _ 4 1": +3 43;) BF : W51 Dug + _..__. We _A/pe <1! Z738 pr DP; Li’e Ae 7. (CF = WB (dead PIVP: ‘L'l‘fh’i Taflkcfim’ M V Flijhflrdafd Induce. Ja CB deft rag-7:0“ «W5 “(0324/7 7.9110 base I. force; whee bots—fl , 7465613345 b‘u’w:‘(¢ walk/(L‘éoog N w 1. . #19155 (f,2—%:b 7:) 7C7 = 204/!!! ) i: ha: 7 ’/4w.6, m . ~50“ Xowuwwd M“ carnaa‘ t SkbM (fare rfi‘c PM?) —foer aun‘ier'effrlnu c? emiétor 75 MN) 5-; Jiflw’dw: “of Lem/7 «cough. aeopfkj ' /a.o efhc‘gwt Miter M64! l)?“ .654: $7113 ‘ _. Mfse; ~ aura/74164 rig, (444(4- A74 'i‘ijollJaA of law can-«4265, B C E C — Veriicd PAIPI ’/"\—7 ." Only fbr Comm-A ' Cel(¢c_‘69-r' fig bat—70“" U66 1V, Wileafir~— ml 426' wt wgdwevjfgg ‘ "1W effing/c- emrflax M” Wfltqi:fi . I» 6A2 Iuésfi-v‘é -- Jan {351%, - / W67 f“ chfion: can law/'4!“ 64% forum/X AIM. ___L_ 536.9214; 11925 GIMMa‘éN:é7/L ¢ ’ / : ?/inlk N éc‘ffl? P L Moézll'f7f’J “obi/[2L7 flaw: 42764 44725 /W&/ flu; $09 fa {no.9 Cuf/v—S- FP=39a +9 5‘09 Caz/yr; gIvar/Warm N FSNVNWC #1 {L L ( :- L. 2 N <— N R “- <"' < > ,,_ (SH W GT W ’1 W I 1.4. _D__/fl L P” ” 0%? ‘ (N MT ELM/x). 1‘” VA Q—m=’> — I ‘3'— 3W€S If 25H " ZOGJ‘L/n/ E: Zack/fl x 5‘1] .__ )OLJI. ND 1 MM-6&1/—:FVVMILDD M A l) ' ”—4;— RS‘H ’ 50 g/‘(AGOZ‘NDGJ Ill/1° 66K le'o 4| k- >Y Ax XJ flu/us; 74M / , 5 fig“; 6 H7U7 Avg/MM fir M 7 i ‘3 n+ Lon) 25% ((DJL/lj I” M7 Note 5441 I‘i7&/l~ W WIW K IOV\ JL/D ,7 2V4 7 A6“ (“‘7L‘ [95” ‘ W émeX Eifzcar‘e 35H. unaj 9/; M 42(— (2514:100JL/U’? MT7A arm/7L: "ddvdchLWI-fi Maiuhmw k. npmv W Coflec‘ll‘r‘f m Laja basis 4.»: {:7 fibwiex (704/ W5 land—2V +9134 W<0Hecm Sea Chm? kW $42.9 Passive Components In Blpolar Integrated Clrcults _ Sheet p Absolute Matching ' Resistor Type Q/D Tolerance (‘70) Tolerance (%) Temperature Coefficient . Base diffused 100—200 $20 $2 (5 p-wide) +1500 to +2000 ppm/°C i 0.2 (50 [1 wide) a 0 “1! 0c, M 55'? Emitter diffused 2—10 1:20 -l_- 2 + 600 ppm/°C Egg Ion implanted 100—1000 i 3 i 2 (5 [1 wide) Controllable ggg i015 (50 11 wide) to i 100 ppm/°C %‘ M fig; Base pinch 2k—10k i 50 i 10 +2500 ppm/°C “V O . . ‘25 Epitaxial Zk—Sk 3:30 is +3000 ppm'/°c (9 ' 2 Epitaxial pinch 4k—10k iSO :7 - +3000 ppm/°C ' W Thin film 0.1k—2k i5- 20 0.2— i2 1- 10 to i200 ppm/°C . Figure 2.34 Summary of resistor properties for different types of IC resistors. H- l+ Poly-«ft 30' BOOK/1:1 30-70 46; {of , 2% MoLn‘nj‘éa/ ’0a9fM/i/ + IS‘WNM/cc 5mm. :14ch WW "—005 0634.414va 4 wide VM/‘ewgy fiahue Ffarm’Jajfé/ff)~ W {436 (pace/1444. ...
View Full Document

{[ snackBarMessage ]}