HW3%20Solution - EEL5225 Principles of MEMS Transducers HW3...

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Principles of MEMS Transducers Page 1 of 4 Prepared by D. Arnold September 26, 2010 EEL5225 Principles of MEMS Transducers HW3 Fall 2010 Semester Assigned: Monday, 9/13 Due: Wednesday, 9/22 1. You want to etch circular holes into an SiO 2 layer on a silicon wafer to achieve the structure shown below. For the etch (using hydrofluoric acid), you will need a photoresist masking layer (not shown in the drawings). a. Assuming you use a positive photoresist, sketch a top-view of the mask that you would use, shading the appropriate regions. Is this a dark-field or clear-field mask? b. Repeat part a., but assume a negative photoresist. SiO 2 Si CROSS-SECTION TOP-VIEW
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Principles of MEMS Transducers Page 2 of 4 Prepared by D. Arnold September 26, 2010 2. It is desired to implant boron to achieve a peak concentration of 10 20 /cm 3 at the silicon surface. To do so, the implant is performed through a 50 nm screening oxide. a.
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This note was uploaded on 01/17/2011 for the course EEL 5225 taught by Professor Arnold during the Fall '08 term at University of Florida.

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HW3%20Solution - EEL5225 Principles of MEMS Transducers HW3...

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