ECE3040_Homework4_Solution

# ECE3040_Homework4_Solution - GEORGIA INSTITUTE OF...

This preview shows pages 1–3. Sign up to view the full content.

ECE 3040B: Homework #4, Solutions February 16, 2009 Page 1 of 3 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3040B: Microelectronic Circuits Spring Semester 2009, Homework #4 SOLUTIONS 1. Pierret, Problem 6.10 (20 points)

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
ECE 3040B: Homework #4, Solutions February 16, 2009 Page 2 of 3 2. Pierret, Problem 6.13 (20 points) 3. PN-Junction: Reverse Bias (20 points) The junction capacitance C j of a one-sided silicon pn junction (i.e. one side of the junction is highly doped, the other side is much lower doped, e.g. n + p or p + n) at T = 300 K is measured under a reverse bias V
This is the end of the preview. Sign up to access the rest of the document.

## This note was uploaded on 01/17/2011 for the course ECE 3040 taught by Professor Hamblen during the Fall '07 term at Georgia Institute of Technology.

### Page1 / 3

ECE3040_Homework4_Solution - GEORGIA INSTITUTE OF...

This preview shows document pages 1 - 3. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online