ECE3040_Homework4

# ECE3040_Homework4 - under a reverse bias V A = – 50 mV...

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ECE 3040B: Homework #4 Due Date: February 16, 2009 Page 1 of 1 G EORGIA I NSTITUTE OF T ECHNOLOGY S CHOOL OF E LECTRICAL AND C OMPUTER E NGINEERING ECE 3040B: Microelectronic Circuits Spring Semester 2009, Homework #4 Homework Due Date: Monday, February 16, 2009 1. Pierret, Problem 6.10 (20 points) 2. Pierret, Problem 6.13 (20 points) 3. PN-Junction: Reverse Bias (20 points) The junction capacitance C j of a one-sided silicon pn junction (i.e. one side of the junction is highly doped, the other side is much lower doped, e.g. n + p or p + n) at T = 300 K is measured
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Unformatted text preview: under a reverse bias V A = – 50 mV and found to be 1.3 pF. The junction area is 10-5 cm 2 and V bi = 0.95 V. (a) Find the doping concentration of the low-doped side of the junction. (b) Find the doping concentration of the higher doped region. 4. Jaeger, Blalock, Problem 3.71(a) (20 points) Find the Q-points for the diodes in the circuit using (a) the ideal diode model and (b) the constant voltage drop model with V on = 0.75 V. 5. Jaeger, Blalock, Problem 3.78 (20 points) Find the Q-point for the Zener diode....
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## This note was uploaded on 01/17/2011 for the course ECE 3040 taught by Professor Hamblen during the Fall '07 term at Georgia Tech.

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