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HW11 - Georgia Institute of Technology School of Electrical...

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Unformatted text preview: Georgia Institute of Technology School of Electrical and Computer Engineering ECE 3040A Homework 1] Due: Friday 11111412008 in class 1. (20 points) Pierrot 16.1 parts (0), (d), and (e) only. 2. (20 points) Pierrot 16.9 parts (SO-(1) only. 3. (20 points) Pierrot 16.11 parts (a) and (1)) only. 4. (20 points) Pierrot 1?.10. 5. (20 points) Pierret 17.20 parts (a)-(f) only. 1h] l-or the dip. 465 parameter sets listed belmv first indicate the Specified biasina condi- tion and then draw the energy band diagram and block Charge diagran‘l that characterize the static state of the system. Assume the MOS structure to be ideal h (be 41‘) (b ‘1) = 18. 5 = 9 = _ - (b5 = '4 ATM kT/q J th’q [3' tit-Tit; h as. as. (bl—i=—l2.——“—=O (aim: Jb—S—i' kqu ltTiq kT/q ' kaq ‘ '1 t) ‘5“ — 12 is -2—t kTi’q kTJ’q 16.9 Figure P169 is a dimensioned energy band diagram for an ideal MOS~C operated at T = 300 K with VG #— 0. Note that E]: = Ei at the Si—SiO2 interface. EFM Figure P163 (a) Do equilibrium conditions prevail inside the semiconductor? (bl ibis = ? (C) (55 3 ? (d) VG = ? (c) x0 = ‘i’ (f) Draw the block charge diagram corresponding to the state pictured in the energy band ' diagram. For reference purposes, include the maximum equilibrium depletion width. WT, on your diagram. 16.11 With modern-day processing it is possible to produce semiconductor—oxide—semi- conductor (SOS) capacitors in which a semiconductor replaces the metallic gate in a stan- dard MOS-C. Answer the questions posed below assuming an SOS-C composed of two identical n-rype nondegenerate silicon electrodes, an idea! structure, and a biasing arrange- ment as defined by Fig. P16.l 1. Include any comments which may help to forestall a mis- interpretation of the requested pictorial answers. {21) Draw the energy band diagram for the structure when (i) VG = 0, (ii) ‘VG > 0 but small, (iii) VG > 0 and very large, (iv) ‘VG < 0 but small, and (v) VG C 0 and very large. (b) Draw the block charge diagrams corresponding to the five biasing conditions consid- ered in part (a). (c) Sketch the expected shape of the high-frequency C—V characteristic for the SOS-C described in this problem. For reference purposes, also sketch on the same plot the high-frequency C—l/G characteristic of an MOS-C assumed to have the same semi- conductor doping and oxide thickness as the SOS-C Figure P16.11 OSFET characteristics are a plot of [D versus VD lues. An alternative plot of ID versus VG or is sometimes useful. Sketch the shape of the an ideal n-channel MOSFET. Specifi— = l, 2, 3, and 4 V. Explain how you 17.10 The most widely encountered M with VG or 'L/G—VT held constant at select va VGA/T with VD held constant at select values 10 versus VG— VT characteristics to be expected from cally show the characteristics corresponding to VD arrived at your sketch. 17.20 General MOSFET Review An [D—VD characteristic derived from an ideal MOSFET is pictured in Fig. P1120. Note that {mm = 10‘3 A and VD“! = 5 V for the given characteristic. Answer the questions that follow making use of the square-law theory and the information conveyed in the figure. VDm=SV Figure P17.20 (3} Carefully sketch the inversion layer and depletion region inside the MOSFET corre- sponding to point (I) on the pictured characteristic. Show and label all parts of the transistor. (b) Given a turn-on voltage of ‘VT = 1 V, what is the gate voltage one must apply to the MOSFET gate to obtain the pictured characteristic? (c) If .r0 = 0.1 pm. what is the inversion-layer chargetcm2 at the drain end of the channel when the MOSFET is biased at point (2) on the characteristic? (d) Suppose the gate voltage is readjusted so that VG — VT = 3 V. For the new condition, determine ID if VD = 4 V. (e) Determine gd if the quiescent operating point of the MOSFET is point (3) on the pic- tured characteristic. {f} Determine gm if the quiescent operating point of the MOSFET is point (3) on the pictured characteristic. ( [IO J If VD = 0 (i.e., the drain is shorted to the source and back). sketch the general shape of the CG gate capacitance) versus VG characteristic to be expected from the MOSFET. ...
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HW11 - Georgia Institute of Technology School of Electrical...

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