ch08_solutions

ch08_solutions - CHAPTER 8 8.1 (a) 256Mb = 2 8 ( 10 ) 210)...

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8-258 CHAPTER 8 8.1 ( a ) 256Mb = 2 8 2 10 ( 29 2 10 ( 29 = 268,435,456 bits (b) 1Gb = 2 10 ( 29 3 = 1,073,741,824 bits c ( 29 256Mb = 2 8 2 10 ( 29 2 10 ( 29 = 2 28 | 128kb = 2 7 2 10 ( 29 = 2 17 | 2 28 2 17 = 2 11 = 2048 blocks 8.2 I 1 mA 2 28 bits = 3.73 pA bit 8.3 P = CV DD 2 f = 64 10pF ( 29 3.3 ( 29 2 1 GHz ( 29 = 6.97 W 8.4 P = CV DD 2 f = 2 30 ( 29 100fF ( 29 5 V ( 29 2 1 0.012 s = 0.224 W 8.5 "1" = V DD = 3 V | "0": 3 - V O 10 10 = 2 1 25 x 10 - 6 ( 29 3 - 0.75 - V O 2 V O V O = 2.67 m V | "0"= 2.67 m V 8.6 *PROBLEM 8.6 - 6-T Cell VDD 1 0 DC 3 MN1 3 2 0 0 MOSN W=4U L=2U AS=16P AD=16P MP1 3 2 1 1 MOSP W=10U L=2U AS=40P AD=40P MN2 2 3 0 0 MOSN W=4U L=2U AS=16P AD=16P MP2 2 3 1 1 MOSP W=10U L=2U AS=40P AD=40P MN3 3 0 0 0 MOSN W=4U L=2U AS=16P AD=16P MN4 2 0 0 0 MOSN W=4U L=2U AS=16P AD=16P .IC V(3)=1.55V V(2)=1.45V V(1)=3 .OP .TRAN 0.025N 10N UIC .MODEL MOSN NMOS KP=5E-5 VTO=0.91 GAMMA=0.99 +LAMBDA=.02 TOX=41.5N +CGSO=330P CGDO=330P CJ=3.9E-4 CJSW=510P .MODEL MOSP PMOS KP=2E-5 VTO=-0.77 GAMMA=0.5 +LAMBDA=.05 TOX=41.5N +CGSO=315P CGDO=315P CJ=2.0E-4 CJSW=180P .PRINT TRAN V(2) V(3) .PROBE V(2) V(3) .END
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8-259 0s 2ns 4ns 6ns 8ns 10ns Time 4.0V 3.0V 2.0V 1.0V 0V -1.0V Result: t = 1.5 ns 8.7 (a) (b) 3 V 1.5 V 0.7 V 2.3 V 3 V 0.7 V 2.3 V 1.5 V +3 V First Case : Both transistors are in the linear region I DS = 25 x 10 - 6 1 1 2.3 - 0.7 - 0.7 2 0.7 = 21.88 m A 21.88 m A = 25 x 10 - 6 W L 3 - 0.7 - 0.7 - 0.8 2 0.8 W L 0.911 = 1 1.10 Second Case : Both transistors are also in the linear region 10 x 10 - 6 1 1 0.7 - 3 - - 0.7 ( 29 - - 0.7 ( 29 2 - 0.7 ( 29 = 25 x 10 - 6 W L 3 - 1.5 - 0.7 - 0.8 2 0.8 W L 1.09 1 So W L ≤ 1 1.10
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8-260 8.8 *Problem 8.8 - WRITING THE CMOS SRAM VWL 6 0 DC 0 PULSE(0 3 1NS 1NS 1NS 100NS) VDD 3 0 DC 3 VBL1 4 0 DC 0 VBL2 5 0 DC 3 CBL1 4 0 500FF CBL2 5 0 500FF *Storage Cell MCN1 2 1 0 0 MOSN W=1U L=1U AS=4P AD=4P MCP1 2 1 3 3 MOSP W=1U L=1U AS=4P AD=4P MCN2 1 2 0 0 MOSN W=1U L=1U AS=4P AD=4P MCP2 1 2 3 3 MOSP W=1U L=1U AS=4P AD=4P MA1 4 6 2 0 MOSN W=1U L=1U AS=4P AD=4P MA2 5 6 1 0 MOSN W=1U L=1U AS=4P AD=4P * .OP .TRAN 0.01NS 20NS .NODESET V(1)=3 V(2)=0 .MODEL MOSN NMOS KP=2.5E-5 VTO=.70 GAMMA=0.5 +LAMBDA=.05 TOX=20N +CGSO=4E-9 CGDO=4E-9 CJ=2.0E-4 CJSW=5.0E-10 .MODEL MOSP PMOS KP=1.0E-5 VTO=-.70 GAMMA=0.75 +LAMBDA=.05 TOX=20N +CGSO=4E-9 CGDO=4E-9 CJ=2.0E-4 CJSW=5.0E-10 .PROBE V(1) V(2) V(3) V(4) V(5) V(6) .END 0s 2ns 4ns 6ns 8ns 10ns Time 4.0V 3.0V 2.0V 1.0V 0V -1.0V Small voltage transients occur on both cell storage nodes which die out in 5 - 7 ns.
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ch08_solutions - CHAPTER 8 8.1 (a) 256Mb = 2 8 ( 10 ) 210)...

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