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Unformatted text preview: School of Electrical and Computer Engineering EE 3040B: Migroelectronics Final Exam Georgia Institute of Technology NOTE: Please show all your work to obtain partial credit. The exam is closed boo
You may use four handwritten sheets of formulas. NAB/[E Grade: / notes. mum...“ , “WW—W , ,WF. . maze «a “(Mm «.VxNMwmmmw «aw—“van w Part I (30 points): In problems 110 circle the best answer to each problem. Each problem
has 3 points. There is no penalty for incorrect answers. No partial credit is given. 1. What are the miller indices of the plane shown below? Assume that the lattice is cubic. Z a. (121) b. (212) c. (221) d. (211) 2. Al and Ga are both group HI elements, and As and Sb are both group V elements. Which one
of the following represents a quaternary IIIV semiconductor material? 21. A1025 Gaoso A5030 Pbms 13. A1025 Gao.75 A5035 Pbms 0. A1 Gaz AS sz d a, b, and C 3. The energy band diagram of a semiconductor material is shown below. Using this ﬁgure,
which one of the following statements is correct? a. Total current is zero everywhere (at all x). b. An externally applied electric ﬁeld exists. E F c. The material is uniformly doped with donors. , ’ ’ ' ' ' " ~ \ E . d. All of the above "
A W 4. The excess hole concentration at the junction boundary on the nside of a pn junction is 1/10
times the equilibrium hole concentration in the n—side (Apn(x=0) = 0.1 pno in the ﬁgure below).
Assuming the junction to be at room temperature (T = 300 K), what is the bias voltage, VA? a. 0.025 V b. 0.6 V c. 0.0025 d. —0.6 V 5. Which one of the following statements about Fermi level (EF) is correct? a. The probability of ﬁnding an electron at energy E: is always 50%. b. The probability of a state at energy E1= EF— 2 AE being full is twice the probability of a state
at E2 = E}:  AE c. The probability of a state at energy E1 = EF— AE being full is equal to the probability of a state
at E2 = E: + AE being empty. d. The location of EF in a semiconductor material is approximately the middle of the bandgap. 6. In designing a twostage BJT ampliﬁer shown below, we want to have a relatively large
voltage gain, a moderate input resistance and a small output resistance. What combination of the
stages is the appropriate choice? a. CE for stage 1 and CC for stage 2 \j: ~ ' + b. CE for both stages a  9'43: \/,o
0. CE for stage 1 and CB for stage 2 ' ’ d. CC for stage 1 and CB for stage 2  '3 7. Which scattering mechanism :is the dominant source for mobility limitations in a MOSFET at
room temperature? a. Impurity scattering b. Lattice scattering
0. Surface scattering d. All three mechanisms have comparable strengths 8. An IDVD characteristic derived from an idea] MOSFET is pictured in the ﬁgure below. Given a turnon voltage of VT = 1 V, what is the gate voltage one must apply to the MOSFET gate to
obtain the pictured characteristics: a.VG=4V b.VG=9V c.VG=6V d.VG=llV vmssv IOV 9. What is the input resistance (R) of the ampliﬁer shown below? a. 1K9 b.2KQ c.4KS2 d. 00 10. What is the nominal output voltage at the low state (VOL) in the following MOS inverter?
Assume that R = 100 KQ, Kn = 5 uA/Vz, and vTn = 1. L1 a. VOL = 0.25 V b. VOL = 0.5 V c. VG = 1 V d. none of the above V09 .1; V R Part H (70 points): Solve the following problems. Show all your work to obtain partial
credit. Problem 1 (10 points) The resistance of a 1 cm long bar of ntype Si with cross sectional area of 2000 (pm)2 at
equilibrium at room temperature (T = 300 K) is R = 100 K52. Assuming that for Si at room temperature, ni = 1010 cm'3, un= 1350 cmZ/(Vsec), and up=460 cmZ/(Vsec): (3) a. Find the concentration of donors (ND). (2) b. Find the location of Fermi level 03F) relative to E and draw the energy band diagram. (3) c. The sample is then uniformly illuminated with light. As a result, the resistance of the
bar at steady state is reduced to R = 10 KS2. Find the excess hole concentrations (Apn)
due to the light illumination. (2) d. Does lowlevel injection apply to this problem? Why? Problem 2 (13 points) A dimensioned energy band diagram for an ideal MOSC operated at T = 300 K (ni = 1010 cm‘3 ) with VG at 0 is shown below. Using this ﬁgure: (4) (2) (2) (2) (3) EC $0.661
2" :IOJev
Ev a. Determine (pp and (pg. b. Is the semiconductor ntype or ptype? Also, ﬁnd the doping (donor or acceptor)
concentration. 0. Determine V3. (1. Determine the oxide thickness x0. Use Ks = 11.8 and KO = 3.9. e. Sketch the block charge diagram corresponding to the state pictured in the energy band
diagram. What is the state of the MOSC (accumulation, depletion, or inversion)? L2 Problem 3 (10 points) Find and plot the transfer characteristics (v0 versus vi) for the following circuit. Assume both
diodes are ideal. 61:9 Problem 4 (7 points) U Using EbersMoll model, derive the IVA relationship for the device shown below. Problem 5 (14 points)
For the MOSFET ampliﬁer circuits shown below, ﬁnd:
(5) a. DC equivalent circuit and Q point (195 and VDS). (3) b. AC equivalent circuit, ampliﬁer conﬁguration (CS, CG or CD), and small signal model
parameters. (2) 0. Voltage gain (vo/vs).
(2) d. Input resistance Ri as speciﬁed in the circuit.
(2) e. Output resistance R0 as speciﬁed in the circuit For the MOSFET, assume that VTn = 1 V, and K1] = 0.5 mA/VZ, and A. = 0. Problem 5 (14 points) For the MOSFET ampliﬁer circuits shown below, ﬁnd: (5)
(3) (2)
(2)
(2) a. DC equivalent circuit and Q point (193 and VDS). b. AC equivalent circuit, ampliﬁer conﬁguration (CS, CG or CD), and small signal model
parameters. c. Voltage gain (vo/vs).
d. Input resistance R as speciﬁed in the circuit. e. Output resistance R0 as speciﬁed in the circuit For the MOSFET, assume that VTp = 1 V, and Kp = 0.4 mA/Vz, and A = 0. Other parameters are
R1=2.2MQ,R2=2.2KQ,R4=22KQ,RD= l8KQ,andVDD= 18V. Extra work on Problem 5 Problem 6 (10 points) For the BJ T differential ampliﬁer circuits shown below, ﬁnd: (4) a. The Q point of the transistors (1c and VCE). Assume that the transistors are identical
(3) b. Draw the differentialmode halfcircuit and ﬁnd the differentialmode gain (Adm). (3) 0. Draw the commonmode halfcircuit and ﬁnd the commonmode gain (Am). For both transistor, assume that VBE = 0.7 in the active region, and BF = [30 = 150, and VA = 00.
Other parameters are REE = 200 KQ, R1 = 2 K9, RC = 200 K9, and VEE = Vcc = 22 V. I +VCC bl Problem 7 (6 points) Find the logic function (Y) implemented by the following NMOS logic circuit. ...
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This note was uploaded on 01/17/2011 for the course ECE 3040 taught by Professor Hamblen during the Fall '07 term at Georgia Institute of Technology.
 Fall '07
 HAMBLEN

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