EE372_Assignment6 - Chapter 5 Chapter 5 5.1 Bandgap and photodetection a Determine the maximum value of the energy gap that a semiconductor used as

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
Chapter 5 5.1 Chapter 5 5.1 Bandgap and photodetection a . Determine the maximum value of the energy gap that a semiconductor, used as a photoconductor, can have if it is to be sensitive to yellow light (600 nm). b . A photodetector whose area is 5 10 -2 cm 2 is irradiated with yellow light whose intensity is 2 mW cm -2 . Assuming that each photon generates one electron-hole pair, calculate the number of pairs generated per second. c . From the known energy gap of the semiconductor GaAs ( E g = 1.42 eV), calculate the primary wavelength of photons emitted from this crystal as a result of electron-hole recombination. d . Is the above wavelength visible? e . Will a silicon photodetector be sensitive to the radiation from a GaAs laser? Why? 5.2 Intrinsic Ge Using the values of the density of states effective masses m e * and m h * in Table 5.1, calculate the intrinsic concentration in Ge. What is n i if you use N c and N v from Table 5.1? Calculate the intrinsic resistivity of Ge at 300 K.
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 01/20/2011 for the course EE 372 taught by Professor Johanson/kasap during the Fall '10 term at University of Saskatchewan- Management Area.

Page1 / 2

EE372_Assignment6 - Chapter 5 Chapter 5 5.1 Bandgap and photodetection a Determine the maximum value of the energy gap that a semiconductor used as

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online